Preparation of gallium nitride (GaN) and related compounds by plasma immersion ion implantation (PIII) of nitrogen into gallium arsenide (GaAs)

通過等離子體浸沒離子注入法將氮離子注入砷化鎵來製備氮化鎵及相關材料

Student thesis: Master's Thesis

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Author(s)

  • Kwong Chun Dennis LO

Detail(s)

Awarding Institution
Supervisors/Advisors
Award date2 Oct 2003

Abstract

In this project, a novel method for producing gallium nitride (GaN) by plasma immersion ion implantation (PIII) of nitrogen into gallium arsenide (GaAs) followed by rapid thermal annealing (RTA) has been investigated. Our approach uses a broad ion-impact energy distribution and multiple implant voltages with variable implant doses to form a spread-out nitrogen depth profile and an amorphous surface layer. This approach circumvents the retained-dose limitation and low nitrogen content problems associated with ion beam implantation at fixed energy. Raman spectroscopy, transmission electron microscopy (TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) were conducted on the samples. For the samples which had undergone RTA at 850°C for 2 minutes, a Raman peak at 577cm-1 associated with GaN was observed. The weak Raman intensity indicated that a small amount of GaN was present. Cross-sectional TEM imaging showed that the thickness of the region containing GaN was about 40nm. When RTA was performed at 950°C for 2 minutes, Ga2O3 nano-ribbon was found on the GaAs sample surface. The ribbons were 0.1 to 2 µm in width, several tens of manometers in thickness and several tens of micrometers in length. Raman spectroscopy confirmed that the ribbons are single crystalline Ga2O3. In addition, the Ga2O3 ribbons were found to possess strong visible photoluminescence. The possible formation mechanism of these nano-ribbons are discussed.

    Research areas

  • Materials, Gallium nitride, Gallium compounds, Gallium arsenide, Semiconductors, Ion implantation