ZnO1-x Nanorod Arrays/ZnO Thin Film Bilayer Structure : From Homojunction Diode and High-Performance Memristor to Complementary 1D1R Application

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Chi-Hsin Huang
  • Jian-Shiou Huang
  • Shih-Ming Lin
  • Wen-Yuan Chang
  • Yu-Lun Chueh

Detail(s)

Original languageEnglish
Pages (from-to)8407-8414
Journal / PublicationACS Nano
Volume6
Issue number9
Online published18 Aug 2012
Publication statusPublished - 25 Sep 2012
Externally publishedYes

Abstract

We present a ZnO1-x nanorod array (NR)/ZnO thin film (TF) bilayer structure synthesized at a low temperature, exhibiting a uniquely rectifying characteristic as a homojunction diode and a resistive switching behavior as memory at different biases. The homojunction diode is due to asymmetric Schottky barriers at interfaces of the Pt/ZnO NRs and the ZnO TF/Pt, respectively. The ZnO1-x NRs/ZnO TF bilayer structure also shows an excellent resistive switching behavior, including a reduced operation power and enhanced performances resulting from supplements of confined oxygen vacancies by the ZnO1-x NRs for rupture and recovery of conducting filaments inside the ZnO TF layer. A hydrophobic behavior with a contact angle of ∼125° can be found on the ZnO1-x NRs/ZnO TF bilayer structure, demonstrating a self-cleaning effect. Finally, a successful demonstration of complementary 1D1R configurations can be achieved by simply connecting two identical devices back to back in series, realizing the possibility of a low-temperature all-ZnO-based memory system.

Research Area(s)

  • complementary 1D1R, homojunction diode, nonvolatile memory, resistive switching, ZnO1-x nanorod arrays

Citation Format(s)

ZnO1-x Nanorod Arrays/ZnO Thin Film Bilayer Structure : From Homojunction Diode and High-Performance Memristor to Complementary 1D1R Application. / Huang, Chi-Hsin; Huang, Jian-Shiou; Lin, Shih-Ming et al.

In: ACS Nano, Vol. 6, No. 9, 25.09.2012, p. 8407-8414.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review