Zincblende and wurtzite phases in InN epilayers and their respective band transitions

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • P. Specht
  • X. Xu
  • R. Armitage
  • E. R. Weber
  • E. Erni
  • C. Kisielowski

Detail(s)

Original languageEnglish
Pages (from-to)225-229
Journal / PublicationJournal of Crystal Growth
Volume288
Issue number2
Publication statusPublished - 1 Mar 2006
Externally publishedYes

Abstract

Zincblende and wurtzite phases of InN are found in InN epilayers deposited by molecular beam epitaxy on GaN buffers which were grown by metal organic chemical vapor deposition. Valence electron energy loss spectroscopy (VEELS) was applied to determine band transitions in both phases of InN. GaN buffer layers were used as VEELS reference. The chemistry and crystalline structure of the observed areas was recorded simultaneously to exclude a contribution from oxides and/or metal clusters or extended defects such as grain boundaries. At room temperature a band transition for wurtzite InN was found at (1.7±0.2)eV and for zincblende InN at (1.4±0.2) eV that are ascribed to the fundamental bandgaps of the respective polytypes. Those values correlate well with recent results of various research groups measuring the bandgap in InGaN alloys with VEELS.

Research Area(s)

  • A1. Band transitions, A1. Characterization, A1. VEELS, B1. Nitrides, B1. Polytypes

Citation Format(s)

Zincblende and wurtzite phases in InN epilayers and their respective band transitions. / Specht, P.; Ho, J. C.; Xu, X.; Armitage, R.; Weber, E. R.; Erni, E.; Kisielowski, C.

In: Journal of Crystal Growth, Vol. 288, No. 2, 01.03.2006, p. 225-229.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review