Zinc and phosphorus co-implantation in indium phosphide

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Detail(s)

Original languageEnglish
Pages (from-to)52-54
Journal / PublicationApplied Physics Letters
Volume73
Issue number1
Publication statusPublished - 1998
Externally publishedYes

Abstract

Electrical activation and dopant diffusion in Zn-implanted InP after rapid thermal annealing have been investigated. For an as-implanted Zn concentration of ∼4×1019cm-3, only ∼7% of the implanted Zn atoms formed electrically active shallow acceptors following a 950 °C/5 s annealing cycle. The low activation was the result of rapid Zn out-diffusion - only ∼14% of the implanted dopant was retained after annealing. A significant enhancement in electrical activation and a reduction in Zn loss were achieved in Zn+P co-implanted samples which yielded a net hole concentration of ≤6×1018cm-3 and >50% Zn retention. The saturation of the free hole concentration in Zn+P co-implanted samples was attributed to the formation of Zn interstitial donors and Group-V-related donor-type native defects. For comparison, Zn+Al and Zn+Al+P co-implanted samples were also examined to distinguish the relative influences of implantation-induced disorder and nonstoichiometry on electrical activation and dopant diffusion. For the given implant conditions, we found that nonstoichiometry was the dominant influence. © 1998 American Institute of Physics.

Citation Format(s)

Zinc and phosphorus co-implantation in indium phosphide. / Yu, Kin Man; Ridgway, M. C.

In: Applied Physics Letters, Vol. 73, No. 1, 1998, p. 52-54.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review