Zinc and group V element co-implantation in indium phosphide
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Pages (from-to) | 65-71 |
Journal / Publication | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
Volume | 168 |
Issue number | 1 |
Publication status | Published - May 2000 |
Externally published | Yes |
Link(s)
Abstract
Group V elements with mass ranging from 35 to 122 amu have been co-implanted with Zn in InP substrates. Co-implantation with all group V elements drastically reduced Zn out-diffusion and to a certain extent also inhibited Zn in-diffusion. The reduction in out-diffusion was insensitive to the group V element mass and thus, to implantation-induced damage. We believe the group V element excess created an In-vacancy excess that enhanced Zn substitution into the In sublattice. A maximum hole concentration of 7×1018 cm-3 was achieved with P co-implantation. Electrochemical capacitance-voltage profiling clearly showed a decrease in hole concentration as a function of increasing group V element mass. This was attributed to differences in compensating residual implantation-induced damage.
Citation Format(s)
Zinc and group V element co-implantation in indium phosphide. / Yu, Kin Man; Ridgway, M. C.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 168, No. 1, 05.2000, p. 65-71.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 168, No. 1, 05.2000, p. 65-71.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review