Zinc and group V element co-implantation in indium phosphide

Group V elements with mass ranging from 35 to 122 amu have been co-implanted with Zn in InP substrates. Co-implantation with all group V elements drastically reduced Zn out-diffusion and to a certain extent also inhibited Zn in-diffusion. The reduction in out-diffusion was insensitive to the group V element mass and thus, to implantation-induced damage. We believe the group V element excess created an In-vacancy excess that enhanced Zn substitution into the In sublattice. A maximum hole concentration of 7×10¹⁸ cm^-3 was achieved with P co-implantation. Electrochemical capacitance-voltage profiling clearly showed a decrease in hole concentration as a function of increasing group V element mass. This was attributed to differences in compensating residual implantation-induced damage.