Zero-bandgap graphene for infrared sensing applications

King Wai Chiu Lai; Ning Xi; Hongzhi Chen; Carmen Kar Man Fung; Liangliang Chen

doi:10.1117/12.883597

Zero-bandgap graphene for infrared sensing applications

King Wai Chiu Lai
, Ning Xi
, Hongzhi Chen
, Carmen Kar Man Fung
, Liangliang Chen

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

4 Citations (Scopus)

Abstract

Recently, scientists have been looking for novel materials to improve the performance of optoelectronic devices. Graphene opens up new possibilities for infrared (IR) sensing applications. With a zero-bandgap graphene, electron-hole pairs can be generated easily by low energy photons such as middle-wave infrared signal. We have used an electricfield- assisted method to manipulate graphene between metal microelectrodes successfully. When a graphene contacts with a metal, a built-in potential forms at the interface and it separates the electron-hole pairs that flow as photocurrents. Based on this principle, we demonstrated using the graphene-based devices for infrared detection under a zero-bias operation. We also tried to apply the devices with positive and negative bias voltages, and results indicated the flow of photocurrent is independent of the polarity of the bias voltages. © 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8031
DOIs	https://doi.org/10.1117/12.883597
Publication status	Published - 2011
Externally published	Yes
Event	Micro- and Nanotechnology Sensors, Systems, and Applications III - Orlando, FL, United States Duration: 25 Apr 2011 → 29 Apr 2011

Publication series

Name
Volume	8031
ISSN (Print)	0277-786X

Conference

Conference	Micro- and Nanotechnology Sensors, Systems, and Applications III
Place	United States
City	Orlando, FL
Period	25/04/11 → 29/04/11

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Research Keywords

Graphene
Infrared Detector
Photovoltaic Effect

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10.1117/12.883597

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Cite this

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title = "Zero-bandgap graphene for infrared sensing applications",

abstract = "Recently, scientists have been looking for novel materials to improve the performance of optoelectronic devices. Graphene opens up new possibilities for infrared (IR) sensing applications. With a zero-bandgap graphene, electron-hole pairs can be generated easily by low energy photons such as middle-wave infrared signal. We have used an electricfield- assisted method to manipulate graphene between metal microelectrodes successfully. When a graphene contacts with a metal, a built-in potential forms at the interface and it separates the electron-hole pairs that flow as photocurrents. Based on this principle, we demonstrated using the graphene-based devices for infrared detection under a zero-bias operation. We also tried to apply the devices with positive and negative bias voltages, and results indicated the flow of photocurrent is independent of the polarity of the bias voltages. {\textcopyright} 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).",

keywords = "Graphene, Infrared Detector, Photovoltaic Effect",

author = "Lai, \{King Wai Chiu\} and Ning Xi and Hongzhi Chen and Fung, \{Carmen Kar Man\} and Liangliang Chen",

year = "2011",

doi = "10.1117/12.883597",

language = "English",

isbn = "9780819486059",

volume = "8031",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

note = "Micro- and Nanotechnology Sensors, Systems, and Applications III ; Conference date: 25-04-2011 Through 29-04-2011",

}

TY - GEN

T1 - Zero-bandgap graphene for infrared sensing applications

AU - Lai, King Wai Chiu

AU - Xi, Ning

AU - Chen, Hongzhi

AU - Fung, Carmen Kar Man

AU - Chen, Liangliang

PY - 2011

Y1 - 2011

N2 - Recently, scientists have been looking for novel materials to improve the performance of optoelectronic devices. Graphene opens up new possibilities for infrared (IR) sensing applications. With a zero-bandgap graphene, electron-hole pairs can be generated easily by low energy photons such as middle-wave infrared signal. We have used an electricfield- assisted method to manipulate graphene between metal microelectrodes successfully. When a graphene contacts with a metal, a built-in potential forms at the interface and it separates the electron-hole pairs that flow as photocurrents. Based on this principle, we demonstrated using the graphene-based devices for infrared detection under a zero-bias operation. We also tried to apply the devices with positive and negative bias voltages, and results indicated the flow of photocurrent is independent of the polarity of the bias voltages. © 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).

AB - Recently, scientists have been looking for novel materials to improve the performance of optoelectronic devices. Graphene opens up new possibilities for infrared (IR) sensing applications. With a zero-bandgap graphene, electron-hole pairs can be generated easily by low energy photons such as middle-wave infrared signal. We have used an electricfield- assisted method to manipulate graphene between metal microelectrodes successfully. When a graphene contacts with a metal, a built-in potential forms at the interface and it separates the electron-hole pairs that flow as photocurrents. Based on this principle, we demonstrated using the graphene-based devices for infrared detection under a zero-bias operation. We also tried to apply the devices with positive and negative bias voltages, and results indicated the flow of photocurrent is independent of the polarity of the bias voltages. © 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).

KW - Graphene

KW - Infrared Detector

KW - Photovoltaic Effect

UR - https://www.scopus.com/pages/publications/79957993480

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-79957993480&origin=recordpage

U2 - 10.1117/12.883597

DO - 10.1117/12.883597

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9780819486059

VL - 8031

BT - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Micro- and Nanotechnology Sensors, Systems, and Applications III

Y2 - 25 April 2011 through 29 April 2011

ER -

Zero-bandgap graphene for infrared sensing applications

Abstract

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UN SDGs

Research Keywords

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