XTEM study of Ni gettering to H-implantation-induced nanocavities in SIMOX

Miao Zhang; Weili Liu; Xinzhong Duo; Zhenghua An; Chenghi Lin; Paul K. Chu; R. Scholz

doi:10.1109/.2000.924144

XTEM study of Ni gettering to H-implantation-induced nanocavities in SIMOX

Miao Zhang, Weili Liu, Xinzhong Duo, Zhenghua An, Chenghi Lin, Paul K. Chu, R. Scholz

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

Nanocavities were generated in the silicon substrate of the SIMOX wafer by H implantation and annealing. Different dose of Ni impurities were introduced in the Si overlayer by implantation. The structures of nickel decorated voids and Ni precipitates epitaxially grown in the void band were studied. NiSi ₂ precipitates were observed both in the nanocavities and at the residual defects created by H implantation. The microstructure of Ni precipitate depended on whether there were voids nearby. Without cavities in the vicinity, dislocations were observed in the neighborhood of the precipitate, whereas no dislocation was detected around the precipitate when there are many nanocavities in the neighborhood. Due to the competitive gettering effect of BOX, the gettering efficiency of Ni to nanocavities in SIMOX is lower than that in bulk Si. © 2000 IEEE.

Original language	English
Title of host publication	Proceedings of the International Conference on Ion Implantation Technology
Pages	281-284
DOIs	https://doi.org/10.1109/.2000.924144
Publication status	Published - 2000
Event	2000 13th International Conference on Ion Implantation Technology, IIT 2000 - Alpbach, Austria Duration: 17 Sept 2000 → 22 Sept 2000

Conference

Conference	2000 13th International Conference on Ion Implantation Technology, IIT 2000
Country/Territory	Austria
City	Alpbach
Period	17/09/00 → 22/09/00

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@inproceedings{4243c9a454d6412491e7d972ed8b2250,

title = "XTEM study of Ni gettering to H-implantation-induced nanocavities in SIMOX",

abstract = "Nanocavities were generated in the silicon substrate of the SIMOX wafer by H implantation and annealing. Different dose of Ni impurities were introduced in the Si overlayer by implantation. The structures of nickel decorated voids and Ni precipitates epitaxially grown in the void band were studied. NiSi 2 precipitates were observed both in the nanocavities and at the residual defects created by H implantation. The microstructure of Ni precipitate depended on whether there were voids nearby. Without cavities in the vicinity, dislocations were observed in the neighborhood of the precipitate, whereas no dislocation was detected around the precipitate when there are many nanocavities in the neighborhood. Due to the competitive gettering effect of BOX, the gettering efficiency of Ni to nanocavities in SIMOX is lower than that in bulk Si. {\textcopyright} 2000 IEEE.",

author = "Miao Zhang and Weili Liu and Xinzhong Duo and Zhenghua An and Chenghi Lin and Chu, {Paul K.} and R. Scholz",

year = "2000",

doi = "10.1109/.2000.924144",

language = "English",

isbn = "0780364627",

pages = "281--284",

booktitle = "Proceedings of the International Conference on Ion Implantation Technology",

note = "2000 13th International Conference on Ion Implantation Technology, IIT 2000 ; Conference date: 17-09-2000 Through 22-09-2000",

}

Zhang, M, Liu, W, Duo, X, An, Z, Lin, C, Chu, PK & Scholz, R 2000, XTEM study of Ni gettering to H-implantation-induced nanocavities in SIMOX. in Proceedings of the International Conference on Ion Implantation Technology., 924144, pp. 281-284, 2000 13th International Conference on Ion Implantation Technology, IIT 2000, Alpbach, Austria, 17/09/00. https://doi.org/10.1109/.2000.924144

XTEM study of Ni gettering to H-implantation-induced nanocavities in SIMOX. / Zhang, Miao; Liu, Weili; Duo, Xinzhong et al.
Proceedings of the International Conference on Ion Implantation Technology. 2000. p. 281-284 924144.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - XTEM study of Ni gettering to H-implantation-induced nanocavities in SIMOX

AU - Zhang, Miao

AU - Liu, Weili

AU - Duo, Xinzhong

AU - An, Zhenghua

AU - Lin, Chenghi

AU - Chu, Paul K.

AU - Scholz, R.

PY - 2000

Y1 - 2000

N2 - Nanocavities were generated in the silicon substrate of the SIMOX wafer by H implantation and annealing. Different dose of Ni impurities were introduced in the Si overlayer by implantation. The structures of nickel decorated voids and Ni precipitates epitaxially grown in the void band were studied. NiSi 2 precipitates were observed both in the nanocavities and at the residual defects created by H implantation. The microstructure of Ni precipitate depended on whether there were voids nearby. Without cavities in the vicinity, dislocations were observed in the neighborhood of the precipitate, whereas no dislocation was detected around the precipitate when there are many nanocavities in the neighborhood. Due to the competitive gettering effect of BOX, the gettering efficiency of Ni to nanocavities in SIMOX is lower than that in bulk Si. © 2000 IEEE.

AB - Nanocavities were generated in the silicon substrate of the SIMOX wafer by H implantation and annealing. Different dose of Ni impurities were introduced in the Si overlayer by implantation. The structures of nickel decorated voids and Ni precipitates epitaxially grown in the void band were studied. NiSi 2 precipitates were observed both in the nanocavities and at the residual defects created by H implantation. The microstructure of Ni precipitate depended on whether there were voids nearby. Without cavities in the vicinity, dislocations were observed in the neighborhood of the precipitate, whereas no dislocation was detected around the precipitate when there are many nanocavities in the neighborhood. Due to the competitive gettering effect of BOX, the gettering efficiency of Ni to nanocavities in SIMOX is lower than that in bulk Si. © 2000 IEEE.

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DO - 10.1109/.2000.924144

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 0780364627

SN - 9780780364622

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EP - 284

BT - Proceedings of the International Conference on Ion Implantation Technology

T2 - 2000 13th International Conference on Ion Implantation Technology, IIT 2000

Y2 - 17 September 2000 through 22 September 2000

ER -

XTEM study of Ni gettering to H-implantation-induced nanocavities in SIMOX

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