X-ray topographic determination of the absence of lateral strains in ion-implanted silicon

K. N. Tu; P. Chaudhari; K. Lal; B. L. Crowder; S. I. Tan

doi:10.1063/1.1660909

Author(s)

K. N. Tu
P. Chaudhari
K. Lal
B. L. Crowder
S. I. Tan

Detail(s)

Original language	English
Pages (from-to)	4262-4263
Journal / Publication	Journal of Applied Physics
Volume	43
Issue number	10
Publication status	Published - 1972
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1063/1.1660909 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-0345962457&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(bbb28c59-5725-4261-8063-0d92c75b9de0).html

Abstract

The lattice-to-amorphous transformation of Si caused by implantation of silicon ions results in volumetric expansion. The expansion is primarily in a direction normal to the substrate surface. We infer this from x-ray topographic analysis where no evidence of plastic flow in the region bounding the implanted volume was detected. By measuring the unidirectional expansion, the average density of the amorphous Si layer is found to be 3.8 to 5.6% smaller than that of crystalline Si. © 1972 The American Institute of Physics.

Bibliographic Note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Citation Format(s)

[ RIS ] [ BibTeX ]

X-ray topographic determination of the absence of lateral strains in ion-implanted silicon. / Tu, K. N.; Chaudhari, P.; Lal, K. et al.
In: Journal of Applied Physics, Vol. 43, No. 10, 1972, p. 4262-4263.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Tu, KN, Chaudhari, P, Lal, K, Crowder, BL & Tan, SI 1972, 'X-ray topographic determination of the absence of lateral strains in ion-implanted silicon', Journal of Applied Physics, vol. 43, no. 10, pp. 4262-4263. https://doi.org/10.1063/1.1660909

Tu, K. N., Chaudhari, P., Lal, K., Crowder, B. L., & Tan, S. I. (1972). X-ray topographic determination of the absence of lateral strains in ion-implanted silicon. Journal of Applied Physics, 43(10), 4262-4263. https://doi.org/10.1063/1.1660909

Tu KN, Chaudhari P, Lal K, Crowder BL, Tan SI. X-ray topographic determination of the absence of lateral strains in ion-implanted silicon. Journal of Applied Physics. 1972;43(10):4262-4263. doi: 10.1063/1.1660909

Tu, K. N. ; Chaudhari, P. ; Lal, K. et al. / X-ray topographic determination of the absence of lateral strains in ion-implanted silicon. In: Journal of Applied Physics. 1972 ; Vol. 43, No. 10. pp. 4262-4263.