XPS Study of the Thermal Instability of HfO2 Prepared by Hf Sputtering in Oxygen with RTA

Nian Zhan; M. C. Poon; C. W. Kok; K. L. Ng; Hei Wong

doi:10.1149/1.1608006

Author(s)

Nian Zhan
M. C. Poon
C. W. Kok
K. L. Ng
Hei Wong

Related Research Unit(s)

Department of Electrical Engineering

Detail(s)

Original language	English
Journal / Publication	Journal of the Electrochemical Society
Volume	150
Issue number	10
Publication status	Published - Oct 2003

Link(s)

DOI	DOI https://doi.org/10.1149/1.1608006 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-0142021045&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(3072bfd6-b388-415a-89dd-ce1599b68f05).html

Abstract

Hafnium oxide (HfO₂) gate dielectric film was prepared by Hf sputtering in oxygen, and the thermal instability of HfO₂ was investigated by rapid thermal annealing (RTA) in nitrogen. X-ray photoelectron spectroscopy study reveals that the HfO₂ film is thermally unstable at postmetallization annealing temperatures (>500°C). The HfO ₂ film decomposes and some oxygen atoms are released upon the RTA in nitrogen. In addition, the current-voltage characteristics of the Al/HfO ₂/Si capacitor are also highly unstable at temperatures higher than 300 K. These observations suggest that although HfO₂ has a much higher dielectric constant, it may not be suitable for the gate dielectric application because the postdeposition thermal treatment deteriorates both the physical and the electrical properties of the HfO₂ film. © 2003 The Electrochemical Society. All rights reserved.

Citation Format(s)

[ RIS ] [ BibTeX ]

XPS Study of the Thermal Instability of HfO2 Prepared by Hf Sputtering in Oxygen with RTA. / Zhan, Nian; Poon, M. C.; Kok, C. W.; Ng, K. L.; Wong, Hei.

In: Journal of the Electrochemical Society, Vol. 150, No. 10, 10.2003.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

Zhan, N, Poon, MC, Kok, CW, Ng, KL & Wong, H 2003, 'XPS Study of the Thermal Instability of HfO2 Prepared by Hf Sputtering in Oxygen with RTA', Journal of the Electrochemical Society, vol. 150, no. 10. https://doi.org/10.1149/1.1608006

Zhan, N., Poon, M. C., Kok, C. W., Ng, K. L., & Wong, H. (2003). XPS Study of the Thermal Instability of HfO2 Prepared by Hf Sputtering in Oxygen with RTA. Journal of the Electrochemical Society, 150(10). https://doi.org/10.1149/1.1608006

Zhan N, Poon MC, Kok CW, Ng KL, Wong H. XPS Study of the Thermal Instability of HfO2 Prepared by Hf Sputtering in Oxygen with RTA. Journal of the Electrochemical Society. 2003 Oct;150(10). https://doi.org/10.1149/1.1608006

Zhan, Nian ; Poon, M. C. ; Kok, C. W. ; Ng, K. L. ; Wong, Hei. / XPS Study of the Thermal Instability of HfO2 Prepared by Hf Sputtering in Oxygen with RTA. In: Journal of the Electrochemical Society. 2003 ; Vol. 150, No. 10.