Abstract
We report a study on the optical luminescence properties and the electronic structures of boron nitride nanotubes (BNNTs). BNNTs with natural B (80% 11B and 20% 10B) and pure 10B are investigated in comparison with hexagonal BN crystals using X-ray absorption near-edge structures (XANES) and X-ray excited optical luminescence (XEOL). We find that the BNNT specimen synthesized with natural B contains more oxide impurities than that with pure 10B, resulting in significantly different behavior in optical luminescence. All BN samples with hexagonal structures are found to emit strong luminescence, but the emission spectra are strongly morphology- and structure-dependent. XEOL and XANES measurements were carried out at the B K-edge, N Kedge, and O K-edge in order to reveal the origin of different luminescence channels and the corresponding electronic structures in these BN materials. © 2011 American Chemical Society.
| Original language | English |
|---|---|
| Pages (from-to) | 631-639 |
| Journal | ACS Nano |
| Volume | 5 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 25 Jan 2011 |
| Externally published | Yes |
Research Keywords
- Boron nitride nanotubes
- Oxygen impurities
- X-ray absorption near-edge structures
- X-ray excited optical luminescence
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