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Wigner crystallization due to electrons localized at deep traps in two-dimensional amorphous dielectric

  • S. S. Shaimeev
  • , V. A. Gritsenko
  • , Hei Wong

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

Abstract

We calculated the spatial distribution of electrons localized at deep neutral traps in some amorphous dielectric films based on some fundamental physics in order to explain the phenomena such as space ordering of electrons. We showed that when the surface density of traps (Ns) is much larger than that of the trapped electrons (ns), e.g., ns / N s 0.001, Wigner crystallization occurs due to the Coulomb repulsion of trapped electrons and a two-dimensional quasiperiodic hexagonal lattice or Wigner glass can be formed. © 2010 American Institute of Physics.
Original languageEnglish
Article number263510
JournalApplied Physics Letters
Volume96
Issue number26
DOIs
Publication statusPublished - 28 Jun 2010

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