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wearMeter: an Accurate Wear Metric for NAND Flash Memory

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

Abstract

The program/erase (P/E) cycle is frequently utilized as a yardstick for indicating the wear degree of flash memory. However, this metric exhibits a significant limitation in accuracy. After enduring the same number of P/E cycles, the wear degree of flash memory could vary due to factors such as ambient temperatures and dwell time between two P/E cycles. To reflect the true wear degree of flash memory, this paper proposes an accurate and consistent metric, wearMeter. The proposed metric, independent of wear sources, guarantees accurate offline wear measurement. Moreover, by comparing to the error-correcting capability of the ECC engine, it offers a straightforward assessment of block remaining reliability margins. Leveraging wearMeter, this paper further proposes a novel low-wear Single-Level Cell (SLC) mode, lSLC, which significantly reduces wear compared to the default SLC mode. Experiments show that lSLC demonstrates over 3X the P/E cycles of the default SLC mode under the same conditions, without performance losses. © 2024 IEEE.
Original languageEnglish
Title of host publicationASP-DAC 2024 - 29th Asia and South Pacific Design Automation Conference, Proceedings
Subtitle of host publication29th Asia and South Pacific Design Automation Conference, Proceedings
PublisherIEEE
Pages442-447
ISBN (Electronic)979-8-3503-9354-5
ISBN (Print)979-8-3503-9355-2
DOIs
Publication statusPublished - 2024
Event29th Asia and South Pacific Design Automation Conference (ASP-DAC 2024) - Songdo Convensia, Incheon, Korea, Republic of
Duration: 22 Jan 202425 Jan 2024
https://www.aspdac.com/aspdac2024/

Publication series

NameProceedings of the Asia and South Pacific Design Automation Conference, ASP-DAC
ISSN (Print)2153-6961
ISSN (Electronic)2153-697X

Conference

Conference29th Asia and South Pacific Design Automation Conference (ASP-DAC 2024)
PlaceKorea, Republic of
CityIncheon
Period22/01/2425/01/24
Internet address

Bibliographical note

Full text of this publication does not contain sufficient affiliation information. With consent from the author(s) concerned, the Research Unit(s) information for this record is based on the existing academic department affiliation of the author(s).

Funding

This work was supported in part by the Research Grants Council of the Hong Kong Special Administrative Region, China (Project No. CityU 11218720), and the National Natural Science Foundation of China under Grant No. 62202396. The corresponding author is Qiao Li ([email protected]).

Research Keywords

  • 3D NAND flash
  • accurate wear metric
  • wear degree

RGC Funding Information

  • RGC-funded

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