Weak localization and spin-orbit interaction in side-gate field effect devices at the LaAlO3/ SrTiO3 interface

D. Stornaiuolo, S. Gariglio, A. Fête, M. Gabay, D. Li, D. Massarotti, J. M. Triscone

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

51 Citations (Scopus)

Abstract

Using field effect devices with side gates, we modulate the 2-dimensional electron gas hosted at the LaAlO3/SrTiO3 interface to study the temperature and doping evolution of the magnetotransport. The analysis of the data reveals different transport regimes depending on the interplay between the different (elastic, inelastic, and spin-orbit) scattering times and their temperature dependencies. We find that the spin-orbit interaction strongly affects the low-temperature transport in the normal state in a very large region of the phase diagram, extending beyond the superconducting dome.
Original languageEnglish
Article number235426
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume90
Issue number23
DOIs
Publication statusPublished - 15 Dec 2014
Externally publishedYes

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