Vertically Conductive MoSSpiral Pyramid

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • Jiong Zhao
  • Hyun Kim
  • Gang Hee Han
  • Honggi Nam
  • Young Hee Lee

Detail(s)

Original languageEnglish
Pages (from-to)7723-7728
Journal / PublicationAdvanced Materials
Volume28
Issue number35
Online published30 Jun 2016
Publication statusPublished - 21 Sept 2016
Externally publishedYes

Abstract

c-AFM experiments were conducted on CVD-grown MoS2 spiral pyramid samples and mechanically exfoliated MoS2 samples, which clearly exhibit the difference for the vertical electrical transport between these two cases. The MoS2 spiral sample is synthesized via CVD on a SiO2 substrate. The growth is initiated (nucleated) at a vertically mismatched overlapping of two edges, leading to a screw dislocation having Burgers vector. The growth is then followed by a step-flow growth mode similar to multilayer grapheme. The as-prepared sample is transferred to the copper TEM grid by poly(methyl methacrylate) (PMMA). It was found that the instability is developed at the growing steps/edges and the buried terraces by TEM, which is due to the specific source supply during CVD growth, which may also interfere with the well-defined spiral structures. Most importantly, the feasibility of the helical electrical transport was confirmed through the central threading dislocation in the spiral pyramid for this kind of atomic layer and showed their superior vertical conductance, which may open up various possibilities of interesting applications for this kind of peculiar nanostructures.

Research Area(s)

  • conductive AFM, CVD, molybdenum disulfide, spiral, TEM

Citation Format(s)

Vertically Conductive MoSSpiral Pyramid. / Ly, Thuc Hue; Zhao, Jiong; Kim, Hyun et al.
In: Advanced Materials, Vol. 28, No. 35, 21.09.2016, p. 7723-7728.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review