Vertical Organic–Inorganic Hybrid Perovskite Schottky Junction Transistors

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Original languageEnglish
Article number1800039
Journal / PublicationAdvanced Electronic Materials
Issue number5
Online published22 Mar 2018
Publication statusPublished - May 2018


While organolead halide perovskite materials have attracted considerable attention for high efficiency solar cells, they have shown little potential for use in field-effect transistors (FETs) due to the limited current modulation at room temperature. Here, by developing a vertically gated methylammonium lead iodide (MAPbI3)/indium-tin oxide (ITO) Schottky junction, a room temperature-operable vertical MAPbI3 thin-film transistor is reported. Due to the injection-controlled gating mechanism as well as the vertical channel structure, a current modulation ratio up to 104 is achieved. Fabrication of a nanoporous ITO source electrode forming a highly rectifying Schottky junction with the MAPbI3 layer is the key for the large current modulation. It is discovered that the electron transporting layers on top of the MAPbI3 layer play an important role in achieving a large current rectification of 107 at the Schottky junction and hence large current on/off ratios of the resulting transistor.

Research Area(s)

  • organic–inorganic hybrid perovskite, patterned electrodes, Schottky junctions, vertical transistors