Various methods to reduce defect states in tantalum oxide capacitors for DRAM applications

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)22_Publication in policy or professional journal

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Author(s)

  • W. S. Lau
  • G. Zhang
  • L. L. Leong
  • P. W. Qian
  • Taejoon Han
  • J. Das
  • Nathan P. Sandler

Detail(s)

Original languageEnglish
Article numberE4.22
Pages (from-to)181-187
Journal / PublicationMaterials Research Society Symposium Proceedings
Volume864
Publication statusPublished - 2005

Conference

Title2005 Materials Research Society Spring Meeting (2005 MRS Spring Meeting)
PlaceUnited States
CitySan Francisco
Period28 March - 1 April 2005

Abstract

Tantalum oxide has attracted world-wide interest for DRAM (dynamic random access memory) capacitor applications because of its relative high dielectric constant compared to silicon dioxide or nitride. We would like to point out that tantalum oxide behaves very much like a large bandgap n-type semiconductor with 3 main types of donors responsible for leakage current. Native oxygen vacancies are very deep double donors with EC - Ed = 0.8 eV approximately, where EC is the bottom of the conduction band and Ed is the energy level of the defect state. Si-O vacancy complexes are relatively shallow single donors with EC - Ed = 0.2-0.4 eV. C-O vacancy complexes are relatively shallow single donors with EC - Ed = 0.5-0.6 eV. The key points regarding how to suppress these 3 types of donor defects will be discussed for the purpose of leakage current reduction. © 2005 Materials Research Society.

Citation Format(s)

Various methods to reduce defect states in tantalum oxide capacitors for DRAM applications. / Lau, W. S.; Zhang, G.; Leong, L. L. et al.
In: Materials Research Society Symposium Proceedings, Vol. 864, E4.22, 2005, p. 181-187.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)22_Publication in policy or professional journal