Variable Range Hopping Conduction in n-Si NWs with Focus-Ion-Beam-induced Amorphization

Jr-Jian Ke; Jr-Hau He

doi:10.1109/INEC.2010.5424990

Variable Range Hopping Conduction in n-Si NWs with Focus-Ion-Beam-induced Amorphization

Jr-Jian Ke, Jr-Hau He^*

^*Corresponding author for this work

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

The galvanic wet etching was adopted to fabricate single-crystalline Si nanowires (NWs) at room temperature in HF/AgNO₃ solution. The focus-ion-beam (FIB) direct-write technology was employed to connect the Si NW and Cr/Au electrode. The microstructure and morphology was studied in details, it demonstrates that the amorphization of Si NWs due to the irradiation of focused Ga ion beams. Temperature dependence of conductivity of an individual Si NW is investigated at the temperature ranges from t05K to 390K. The Mott's variable-range hopping (Mott-VRH) model is applied to the conduction due to disorder effect caused by FIB-Pt. Mott's parameters of Si NWs, such as hopping energy, hopping distance and density of states have been estimated.

Original language	English
Title of host publication	INEC 2010
Subtitle of host publication	2010 3rd International Nanoelectronics Conference, Proceedings
Editors	Paul K Chu
Publisher	IEEE
Pages	1144-1145
ISBN (Electronic)	978-1-4244-3544-9
ISBN (Print)	978-1-4244-3543-2
DOIs	https://doi.org/10.1109/INEC.2010.5424990
Publication status	Published - Jan 2010
Externally published	Yes
Event	3rd IEEE International NanoElectronics Conference (INEC 2010) - City University of Hong Kong, Hong Kong, China Duration: 3 Jan 2010 → 8 Jan 2010 http://www.cityu.edu.hk/ieeeinec/

Publication series

Name	INEC - International Nanoelectronics Conference, Proceedings
Publisher	IEEE
ISSN (Print)	2159-3523
ISSN (Electronic)	2159-3531

Conference

Conference	3rd IEEE International NanoElectronics Conference (INEC 2010)
Place	China
City	Hong Kong
Period	3/01/10 → 8/01/10
Internet address	http://www.cityu.edu.hk/ieeeinec/

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10.1109/INEC.2010.5424990

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@inproceedings{6f34ba07407f4f54b88ed42da429bc26,

title = "Variable Range Hopping Conduction in n-Si NWs with Focus-Ion-Beam-induced Amorphization",

abstract = "The galvanic wet etching was adopted to fabricate single-crystalline Si nanowires (NWs) at room temperature in HF/AgNO3 solution. The focus-ion-beam (FIB) direct-write technology was employed to connect the Si NW and Cr/Au electrode. The microstructure and morphology was studied in details, it demonstrates that the amorphization of Si NWs due to the irradiation of focused Ga ion beams. Temperature dependence of conductivity of an individual Si NW is investigated at the temperature ranges from t05K to 390K. The Mott's variable-range hopping (Mott-VRH) model is applied to the conduction due to disorder effect caused by FIB-Pt. Mott's parameters of Si NWs, such as hopping energy, hopping distance and density of states have been estimated.",

author = "Jr-Jian Ke and Jr-Hau He",

year = "2010",

month = jan,

doi = "10.1109/INEC.2010.5424990",

language = "English",

isbn = "978-1-4244-3543-2",

series = "INEC - International Nanoelectronics Conference, Proceedings",

publisher = "IEEE",

pages = "1144--1145",

editor = "Chu, {Paul K}",

booktitle = "INEC 2010",

address = "United States",

note = "3rd IEEE International NanoElectronics Conference (INEC 2010) ; Conference date: 03-01-2010 Through 08-01-2010",

url = "http://www.cityu.edu.hk/ieeeinec/",

}

Ke, J-J & He, J-H 2010, Variable Range Hopping Conduction in n-Si NWs with Focus-Ion-Beam-induced Amorphization. in PK Chu (ed.), INEC 2010: 2010 3rd International Nanoelectronics Conference, Proceedings., 5424990, INEC - International Nanoelectronics Conference, Proceedings, IEEE, pp. 1144-1145, 3rd IEEE International NanoElectronics Conference (INEC 2010), Hong Kong, China, 3/01/10. https://doi.org/10.1109/INEC.2010.5424990

Variable Range Hopping Conduction in n-Si NWs with Focus-Ion-Beam-induced Amorphization. / Ke, Jr-Jian; He, Jr-Hau.
INEC 2010: 2010 3rd International Nanoelectronics Conference, Proceedings. ed. / Paul K Chu. IEEE, 2010. p. 1144-1145 5424990 (INEC - International Nanoelectronics Conference, Proceedings).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

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T1 - Variable Range Hopping Conduction in n-Si NWs with Focus-Ion-Beam-induced Amorphization

AU - Ke, Jr-Jian

AU - He, Jr-Hau

PY - 2010/1

Y1 - 2010/1

N2 - The galvanic wet etching was adopted to fabricate single-crystalline Si nanowires (NWs) at room temperature in HF/AgNO3 solution. The focus-ion-beam (FIB) direct-write technology was employed to connect the Si NW and Cr/Au electrode. The microstructure and morphology was studied in details, it demonstrates that the amorphization of Si NWs due to the irradiation of focused Ga ion beams. Temperature dependence of conductivity of an individual Si NW is investigated at the temperature ranges from t05K to 390K. The Mott's variable-range hopping (Mott-VRH) model is applied to the conduction due to disorder effect caused by FIB-Pt. Mott's parameters of Si NWs, such as hopping energy, hopping distance and density of states have been estimated.

AB - The galvanic wet etching was adopted to fabricate single-crystalline Si nanowires (NWs) at room temperature in HF/AgNO3 solution. The focus-ion-beam (FIB) direct-write technology was employed to connect the Si NW and Cr/Au electrode. The microstructure and morphology was studied in details, it demonstrates that the amorphization of Si NWs due to the irradiation of focused Ga ion beams. Temperature dependence of conductivity of an individual Si NW is investigated at the temperature ranges from t05K to 390K. The Mott's variable-range hopping (Mott-VRH) model is applied to the conduction due to disorder effect caused by FIB-Pt. Mott's parameters of Si NWs, such as hopping energy, hopping distance and density of states have been estimated.

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DO - 10.1109/INEC.2010.5424990

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 978-1-4244-3543-2

T3 - INEC - International Nanoelectronics Conference, Proceedings

SP - 1144

EP - 1145

BT - INEC 2010

A2 - Chu, Paul K

PB - IEEE

T2 - 3rd IEEE International NanoElectronics Conference (INEC 2010)

Y2 - 3 January 2010 through 8 January 2010

ER -

Variable Range Hopping Conduction in n-Si NWs with Focus-Ion-Beam-induced Amorphization

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