Valley polarization enhancement and oscillation in asymmetric T junctions
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Related Research Unit(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 1967-1971 |
| Journal / Publication | Physics Letters, Section A: General, Atomic and Solid State Physics |
| Volume | 383 |
| Issue number | 16 |
| Online published | 22 Mar 2019 |
| Publication status | Published - 6 Jun 2019 |
Link(s)
Abstract
We studied the valley dependent transport in a T junction consisting of an armchair lead and two zigzag leads. Electrons transmitted from the armchair lead to the two outgoing zigzag leads can be valley polarized. When the two outgoing leads have different widths, electrons are pushed into the wider lead and as a result, the valley polarization of the current in the narrow lead is enhanced with an oscillatory dependence on energy. The oscillation pattern is determined by the widths of the two zigzag leads. We analyzed the total local density of states of the device region of the junction and cannot find features that attribute this enhancement to quasi-bound state formation.
Research Area(s)
- Valleytronics, Graphene, Nanostructures, Quantum transport
Citation Format(s)
Valley polarization enhancement and oscillation in asymmetric T junctions. / Zhang, Qingtian; Chan, K.S.
In: Physics Letters, Section A: General, Atomic and Solid State Physics, Vol. 383, No. 16, 06.06.2019, p. 1967-1971.
In: Physics Letters, Section A: General, Atomic and Solid State Physics, Vol. 383, No. 16, 06.06.2019, p. 1967-1971.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
