Valid Window: A New Metric to Measure the Reliability of NAND Flash Memory

Min Ye; Qiao Li; Jianqiang Nie; Tei-Wei Kuo; Chun Jason Xue

doi:10.23919/DATE48585.2020.9116337

Valid Window: A New Metric to Measure the Reliability of NAND Flash Memory

Min Ye^*, Qiao Li, Jianqiang Nie, Tei-Wei Kuo, Chun Jason Xue

^*Corresponding author for this work

Department of Computer Science

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

2 Citations (Scopus)

Abstract

NAND flash memory has been widely adopted in storage systems today. The most important issue in flash memory is its reliability, especially for 3D NAND, which suffers from several types of errors. The raw bit error rate (RBER) when applying default read reference voltages is usually adopted as the reliability metric for NAND flash memory. However, RBER is closely related to the way how data is read, and varies greatly if read retry operations are conducted with tuned read reference voltages. In this work, a new metric, valid window is proposed to measure the reliability, which is stable and accurate. A valid window expresses the size of error regions between two neighboring levels and determines if the data can be correctly read with further read retry. Taking advantage of these features, we design a method to reduce the number of read retry operations. This is achieved by adjusting program operations of 3D NAND flash memories. Experiments on a real 3D NAND flash chip verify the effectiveness of the proposed method.

Original language	English
Title of host publication	Proceedings of the 2020 Design, Automation & Test in Europe Conference & Exhibition (DATE 2020)
Editors	Giorgio Di Natale, Cristiana Bolchini, Elena-Ioana Vatajelu
Publisher	IEEE
Pages	109-114
ISBN (Electronic)	978-3-9819263-4-7
ISBN (Print)	978-1-7281-4468-9
DOIs	https://doi.org/10.23919/DATE48585.2020.9116337
Publication status	Published - Mar 2020
Event	2020 Design, Automation and Test in Europe Conference and Exhibition (DATE 2020) - Grenoble, France Duration: 9 Mar 2020 → 13 Mar 2020

Publication series

Name	Design, Automation and Test in Europe Conference and Exhibition
ISSN (Print)	1530-1591
ISSN (Electronic)	1558-1101

Conference

Conference	2020 Design, Automation and Test in Europe Conference and Exhibition (DATE 2020)
Place	France
City	Grenoble
Period	9/03/20 → 13/03/20

Bibliographical note

Research Unit(s) information for this publication is provided by the author(s) concerned.

Research Keywords

READ

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10.23919/DATE48585.2020.9116337

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Ye, M., Li, Q., Nie, J., Kuo, T.-W., & Xue, C. J. (2020). Valid Window: A New Metric to Measure the Reliability of NAND Flash Memory. In G. D. Natale, C. Bolchini, & E.-I. Vatajelu (Eds.), Proceedings of the 2020 Design, Automation & Test in Europe Conference & Exhibition (DATE 2020) (pp. 109-114). Article 9116337 (Design, Automation and Test in Europe Conference and Exhibition). IEEE. https://doi.org/10.23919/DATE48585.2020.9116337

Ye, Min ; Li, Qiao ; Nie, Jianqiang et al. / Valid Window : A New Metric to Measure the Reliability of NAND Flash Memory. Proceedings of the 2020 Design, Automation & Test in Europe Conference & Exhibition (DATE 2020). editor / Giorgio Di Natale ; Cristiana Bolchini ; Elena-Ioana Vatajelu. IEEE, 2020. pp. 109-114 (Design, Automation and Test in Europe Conference and Exhibition).

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abstract = "NAND flash memory has been widely adopted in storage systems today. The most important issue in flash memory is its reliability, especially for 3D NAND, which suffers from several types of errors. The raw bit error rate (RBER) when applying default read reference voltages is usually adopted as the reliability metric for NAND flash memory. However, RBER is closely related to the way how data is read, and varies greatly if read retry operations are conducted with tuned read reference voltages. In this work, a new metric, valid window is proposed to measure the reliability, which is stable and accurate. A valid window expresses the size of error regions between two neighboring levels and determines if the data can be correctly read with further read retry. Taking advantage of these features, we design a method to reduce the number of read retry operations. This is achieved by adjusting program operations of 3D NAND flash memories. Experiments on a real 3D NAND flash chip verify the effectiveness of the proposed method.",

keywords = "READ",

author = "Min Ye and Qiao Li and Jianqiang Nie and Tei-Wei Kuo and Xue, {Chun Jason}",

note = "Research Unit(s) information for this publication is provided by the author(s) concerned.; 2020 Design, Automation and Test in Europe Conference and Exhibition (DATE 2020) ; Conference date: 09-03-2020 Through 13-03-2020",

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Ye, M , Li, Q, Nie, J, Kuo, T-W & Xue, CJ 2020, Valid Window: A New Metric to Measure the Reliability of NAND Flash Memory. in GD Natale, C Bolchini & E-I Vatajelu (eds), Proceedings of the 2020 Design, Automation & Test in Europe Conference & Exhibition (DATE 2020)., 9116337, Design, Automation and Test in Europe Conference and Exhibition, IEEE, pp. 109-114, 2020 Design, Automation and Test in Europe Conference and Exhibition (DATE 2020), Grenoble, France, 9/03/20. https://doi.org/10.23919/DATE48585.2020.9116337

Valid Window: A New Metric to Measure the Reliability of NAND Flash Memory. / Ye, Min ; Li, Qiao; Nie, Jianqiang et al.
Proceedings of the 2020 Design, Automation & Test in Europe Conference & Exhibition (DATE 2020). ed. / Giorgio Di Natale; Cristiana Bolchini; Elena-Ioana Vatajelu. IEEE, 2020. p. 109-114 9116337 (Design, Automation and Test in Europe Conference and Exhibition).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Valid Window

T2 - 2020 Design, Automation and Test in Europe Conference and Exhibition (DATE 2020)

AU - Ye, Min

AU - Li, Qiao

AU - Nie, Jianqiang

AU - Kuo, Tei-Wei

AU - Xue, Chun Jason

N1 - Research Unit(s) information for this publication is provided by the author(s) concerned.

PY - 2020/3

Y1 - 2020/3

N2 - NAND flash memory has been widely adopted in storage systems today. The most important issue in flash memory is its reliability, especially for 3D NAND, which suffers from several types of errors. The raw bit error rate (RBER) when applying default read reference voltages is usually adopted as the reliability metric for NAND flash memory. However, RBER is closely related to the way how data is read, and varies greatly if read retry operations are conducted with tuned read reference voltages. In this work, a new metric, valid window is proposed to measure the reliability, which is stable and accurate. A valid window expresses the size of error regions between two neighboring levels and determines if the data can be correctly read with further read retry. Taking advantage of these features, we design a method to reduce the number of read retry operations. This is achieved by adjusting program operations of 3D NAND flash memories. Experiments on a real 3D NAND flash chip verify the effectiveness of the proposed method.

AB - NAND flash memory has been widely adopted in storage systems today. The most important issue in flash memory is its reliability, especially for 3D NAND, which suffers from several types of errors. The raw bit error rate (RBER) when applying default read reference voltages is usually adopted as the reliability metric for NAND flash memory. However, RBER is closely related to the way how data is read, and varies greatly if read retry operations are conducted with tuned read reference voltages. In this work, a new metric, valid window is proposed to measure the reliability, which is stable and accurate. A valid window expresses the size of error regions between two neighboring levels and determines if the data can be correctly read with further read retry. Taking advantage of these features, we design a method to reduce the number of read retry operations. This is achieved by adjusting program operations of 3D NAND flash memories. Experiments on a real 3D NAND flash chip verify the effectiveness of the proposed method.

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DO - 10.23919/DATE48585.2020.9116337

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 978-1-7281-4468-9

T3 - Design, Automation and Test in Europe Conference and Exhibition

SP - 109

EP - 114

BT - Proceedings of the 2020 Design, Automation & Test in Europe Conference & Exhibition (DATE 2020)

A2 - Natale, Giorgio Di

A2 - Bolchini, Cristiana

A2 - Vatajelu, Elena-Ioana

PB - IEEE

Y2 - 9 March 2020 through 13 March 2020

ER -

Ye M , Li Q, Nie J, Kuo TW, Xue CJ. Valid Window: A New Metric to Measure the Reliability of NAND Flash Memory. In Natale GD, Bolchini C, Vatajelu EI, editors, Proceedings of the 2020 Design, Automation & Test in Europe Conference & Exhibition (DATE 2020). IEEE. 2020. p. 109-114. 9116337. (Design, Automation and Test in Europe Conference and Exhibition). doi: 10.23919/DATE48585.2020.9116337

Valid Window: A New Metric to Measure the Reliability of NAND Flash Memory

Abstract

Publication series

Conference

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On Optimizing the Reliability and Performance on 3D NAND Flash Memory

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Valid Window: A New Metric to Measure the Reliability of NAND Flash Memory

Abstract

Publication series

Conference

Bibliographical note

Research Keywords

Access Output

Other Access Options

Permanent Link

Other Files and Links

Fingerprint

Student theses

On Optimizing the Reliability and Performance on 3D NAND Flash Memory

Cite this