Valence band offset at silicon/silicon nitride and silicon nitride/silicon oxide interfaces

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Vladimir A. Gritsenko
  • Alexandr V. Shaposhnikov
  • W. M. Kwok
  • Hei Wong
  • Georgii M. Jidomirov

Related Research Unit(s)

Detail(s)

Original languageEnglish
Pages (from-to)135-139
Journal / PublicationThin Solid Films
Volume437
Issue number1-2
Publication statusPublished - 1 Aug 2003

Abstract

The valence band electronic structure of silicon nitride (Si3N4) is studied using the first principal quantum chemical calculation, X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). Assuming that the valence band is formed with N 2p and Si 3s, 3p and 3d electrons and based on the XPS and UPS results, the valance band offset at the Si/Si3N4 interface was estimated to be 1.5 ± 0.2 eV. This hole barrier explains the hole dominating conduction in Si/Si3N4 structure when a positive potential is applied to the silicon substrate. In addition, the UPS study reveals that the valence band offset at the Si3N4/silicon oxide interface is 2.5 ± 0.2 eV. © 2003 Elsevier Science B.V. All rights reserved.

Research Area(s)

  • Silicon nitride, Valence band, X-ray photoelectron spectroscopy

Citation Format(s)

Valence band offset at silicon/silicon nitride and silicon nitride/silicon oxide interfaces. / Gritsenko, Vladimir A.; Shaposhnikov, Alexandr V.; Kwok, W. M.; Wong, Hei; Jidomirov, Georgii M.

In: Thin Solid Films, Vol. 437, No. 1-2, 01.08.2003, p. 135-139.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review