Valence band offset at silicon/silicon nitride and silicon nitride/silicon oxide interfaces

Vladimir A. Gritsenko; Alexandr V. Shaposhnikov; W. M. Kwok; Hei Wong; Georgii M. Jidomirov

doi:10.1016/S0040-6090(03)00601-1

Author(s)

Vladimir A. Gritsenko
Alexandr V. Shaposhnikov
W. M. Kwok
Hei Wong
Georgii M. Jidomirov

Related Research Unit(s)

Department of Electrical Engineering

Detail(s)

Original language	English
Pages (from-to)	135-139
Journal / Publication	Thin Solid Films
Volume	437
Issue number	1-2
Publication status	Published - 1 Aug 2003

Link(s)

DOI	DOI https://doi.org/10.1016/S0040-6090(03)00601-1 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-0038108767&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(b9a60095-5cb4-4dff-8ced-238a1b8ce08e).html

Abstract

The valence band electronic structure of silicon nitride (Si₃N₄) is studied using the first principal quantum chemical calculation, X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). Assuming that the valence band is formed with N 2p and Si 3s, 3p and 3d electrons and based on the XPS and UPS results, the valance band offset at the Si/Si₃N₄ interface was estimated to be 1.5 ± 0.2 eV. This hole barrier explains the hole dominating conduction in Si/Si₃N₄ structure when a positive potential is applied to the silicon substrate. In addition, the UPS study reveals that the valence band offset at the Si₃N₄/silicon oxide interface is 2.5 ± 0.2 eV. © 2003 Elsevier Science B.V. All rights reserved.

Research Area(s)

Silicon nitride, Valence band, X-ray photoelectron spectroscopy

Citation Format(s)

[ RIS ] [ BibTeX ]

Valence band offset at silicon/silicon nitride and silicon nitride/silicon oxide interfaces. / Gritsenko, Vladimir A.; Shaposhnikov, Alexandr V.; Kwok, W. M. et al.
In: Thin Solid Films, Vol. 437, No. 1-2, 01.08.2003, p. 135-139.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

Gritsenko, VA, Shaposhnikov, AV, Kwok, WM, Wong, H & Jidomirov, GM 2003, 'Valence band offset at silicon/silicon nitride and silicon nitride/silicon oxide interfaces', Thin Solid Films, vol. 437, no. 1-2, pp. 135-139. https://doi.org/10.1016/S0040-6090(03)00601-1

Gritsenko, V. A., Shaposhnikov, A. V., Kwok, W. M., Wong, H., & Jidomirov, G. M. (2003). Valence band offset at silicon/silicon nitride and silicon nitride/silicon oxide interfaces. Thin Solid Films, 437(1-2), 135-139. https://doi.org/10.1016/S0040-6090(03)00601-1

Gritsenko VA, Shaposhnikov AV, Kwok WM, Wong H, Jidomirov GM. Valence band offset at silicon/silicon nitride and silicon nitride/silicon oxide interfaces. Thin Solid Films. 2003 Aug 1;437(1-2):135-139. doi: 10.1016/S0040-6090(03)00601-1

Gritsenko, Vladimir A. ; Shaposhnikov, Alexandr V. ; Kwok, W. M. et al. / Valence band offset at silicon/silicon nitride and silicon nitride/silicon oxide interfaces. In: Thin Solid Films. 2003 ; Vol. 437, No. 1-2. pp. 135-139.