TY - JOUR
T1 - Valence band offset at silicon/silicon nitride and silicon nitride/silicon oxide interfaces
AU - Gritsenko, Vladimir A.
AU - Shaposhnikov, Alexandr V.
AU - Kwok, W. M.
AU - Wong, Hei
AU - Jidomirov, Georgii M.
PY - 2003/8/1
Y1 - 2003/8/1
N2 - The valence band electronic structure of silicon nitride (Si3N4) is studied using the first principal quantum chemical calculation, X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). Assuming that the valence band is formed with N 2p and Si 3s, 3p and 3d electrons and based on the XPS and UPS results, the valance band offset at the Si/Si3N4 interface was estimated to be 1.5 ± 0.2 eV. This hole barrier explains the hole dominating conduction in Si/Si3N4 structure when a positive potential is applied to the silicon substrate. In addition, the UPS study reveals that the valence band offset at the Si3N4/silicon oxide interface is 2.5 ± 0.2 eV. © 2003 Elsevier Science B.V. All rights reserved.
AB - The valence band electronic structure of silicon nitride (Si3N4) is studied using the first principal quantum chemical calculation, X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). Assuming that the valence band is formed with N 2p and Si 3s, 3p and 3d electrons and based on the XPS and UPS results, the valance band offset at the Si/Si3N4 interface was estimated to be 1.5 ± 0.2 eV. This hole barrier explains the hole dominating conduction in Si/Si3N4 structure when a positive potential is applied to the silicon substrate. In addition, the UPS study reveals that the valence band offset at the Si3N4/silicon oxide interface is 2.5 ± 0.2 eV. © 2003 Elsevier Science B.V. All rights reserved.
KW - Silicon nitride
KW - Valence band
KW - X-ray photoelectron spectroscopy
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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0038108767&origin=recordpage
U2 - 10.1016/S0040-6090(03)00601-1
DO - 10.1016/S0040-6090(03)00601-1
M3 - RGC 21 - Publication in refereed journal
SN - 0040-6090
VL - 437
SP - 135
EP - 139
JO - Thin Solid Films
JF - Thin Solid Films
IS - 1-2
ER -