USE OF AMORPHOUS SILICON TO FORM SUPERCONDUCTING V//3Si.

J. A. Lacey; P. A. Psaras; K. N. Tu; M. Wittmer

USE OF AMORPHOUS SILICON TO FORM SUPERCONDUCTING V//3Si.

J. A. Lacey, P. A. Psaras, K. N. Tu, M. Wittmer

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Abstract

V//3Si is a silicide which is known to be superconducting. The material exhibits a high transition temperature and has usually been formed in combination with other Vi//xSi//x non-superconducting compounds on crystalline silicon and polycrystalline. If V//3Si is formed in coexistence with a non-superconducting V//xSi//x compound, the critical transition temperature will be decreased and discontinuity will be formed in the film which will adversely affect the superconducting properties. In order to avoid this, continuous films of superconducting V//3Si can be formed by utilizing amorphous silicon as one of the major constituents.

Original language	English
Journal	IBM technical disclosure bulletin
Volume	27
Issue number	9
Publication status	Published - Feb 1985
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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title = "USE OF AMORPHOUS SILICON TO FORM SUPERCONDUCTING V//3Si.",

abstract = "V//3Si is a silicide which is known to be superconducting. The material exhibits a high transition temperature and has usually been formed in combination with other Vi//xSi//x non-superconducting compounds on crystalline silicon and polycrystalline. If V//3Si is formed in coexistence with a non-superconducting V//xSi//x compound, the critical transition temperature will be decreased and discontinuity will be formed in the film which will adversely affect the superconducting properties. In order to avoid this, continuous films of superconducting V//3Si can be formed by utilizing amorphous silicon as one of the major constituents.",

author = "Lacey, {J. A.} and Psaras, {P. A.} and Tu, {K. N.} and M. Wittmer",

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T1 - USE OF AMORPHOUS SILICON TO FORM SUPERCONDUCTING V//3Si.

AU - Lacey, J. A.

AU - Psaras, P. A.

AU - Tu, K. N.

AU - Wittmer, M.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1985/2

Y1 - 1985/2

N2 - V//3Si is a silicide which is known to be superconducting. The material exhibits a high transition temperature and has usually been formed in combination with other Vi//xSi//x non-superconducting compounds on crystalline silicon and polycrystalline. If V//3Si is formed in coexistence with a non-superconducting V//xSi//x compound, the critical transition temperature will be decreased and discontinuity will be formed in the film which will adversely affect the superconducting properties. In order to avoid this, continuous films of superconducting V//3Si can be formed by utilizing amorphous silicon as one of the major constituents.

AB - V//3Si is a silicide which is known to be superconducting. The material exhibits a high transition temperature and has usually been formed in combination with other Vi//xSi//x non-superconducting compounds on crystalline silicon and polycrystalline. If V//3Si is formed in coexistence with a non-superconducting V//xSi//x compound, the critical transition temperature will be decreased and discontinuity will be formed in the film which will adversely affect the superconducting properties. In order to avoid this, continuous films of superconducting V//3Si can be formed by utilizing amorphous silicon as one of the major constituents.

UR - http://www.scopus.com/inward/record.url?scp=0022010858&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0022010858&origin=recordpage

M3 - RGC 21 - Publication in refereed journal

SN - 0018-8689

VL - 27

JO - IBM technical disclosure bulletin

JF - IBM technical disclosure bulletin

IS - 9

ER -

USE OF AMORPHOUS SILICON TO FORM SUPERCONDUCTING V//3Si.

Abstract

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