USE OF AMORPHOUS SILICON TO FORM SUPERCONDUCTING V//3Si.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Journal / Publication | IBM technical disclosure bulletin |
| Volume | 27 |
| Issue number | 9 |
| Publication status | Published - Feb 1985 |
| Externally published | Yes |
Link(s)
Abstract
V//3Si is a silicide which is known to be superconducting. The material exhibits a high transition temperature and has usually been formed in combination with other Vi//xSi//x non-superconducting compounds on crystalline silicon and polycrystalline. If V//3Si is formed in coexistence with a non-superconducting V//xSi//x compound, the critical transition temperature will be decreased and discontinuity will be formed in the film which will adversely affect the superconducting properties. In order to avoid this, continuous films of superconducting V//3Si can be formed by utilizing amorphous silicon as one of the major constituents.
Bibliographic Note
Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
Citation Format(s)
USE OF AMORPHOUS SILICON TO FORM SUPERCONDUCTING V//3Si. / Lacey, J. A.; Psaras, P. A.; Tu, K. N. et al.
In: IBM technical disclosure bulletin, Vol. 27, No. 9, 02.1985.
In: IBM technical disclosure bulletin, Vol. 27, No. 9, 02.1985.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
