Uphill Diffusion Induced Point Contact Reaction in Si Nanowires

Yi-Chia Chou; Lih-Juann Chen; King-Ning Tu

doi:10.1021/acs.nanolett.2c01265

Uphill Diffusion Induced Point Contact Reaction in Si Nanowires

Yi-Chia Chou, Lih-Juann Chen, King-Ning Tu^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

5 Citations (Scopus)

Abstract

The events of repeating nucleation in point contact reactions between nanowires of Si and Ni or Co have been revisited here due to uphill diffusion as well as an extremely high supersaturation, over a factor of 1000, needed for the nucleation. Also what is the diameter of the point contact needs to be defined. The stepwise growth of nanoscale epitaxial silicide can occur because the repeating nucleation events are restricted in nanoscale wires.

Original language	English
Pages (from-to)	6895–6899
Journal	Nano Letters
Volume	22
Issue number	17
Online published	16 Aug 2022
DOIs	https://doi.org/10.1021/acs.nanolett.2c01265
Publication status	Published - 14 Sept 2022

Research Keywords

point contact reaction
silicide formation
repeating nucleation
nanowires
uphill diffusion
epitaxial reaction
EPITAXIAL SILICIDE
NUCLEATION
GROWTH
LAYER
STRAIN
COSI2

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@article{228164e0cabc464db5c27c6fbe3b40e4,

title = "Uphill Diffusion Induced Point Contact Reaction in Si Nanowires",

abstract = "The events of repeating nucleation in point contact reactions between nanowires of Si and Ni or Co have been revisited here due to uphill diffusion as well as an extremely high supersaturation, over a factor of 1000, needed for the nucleation. Also what is the diameter of the point contact needs to be defined. The stepwise growth of nanoscale epitaxial silicide can occur because the repeating nucleation events are restricted in nanoscale wires.",

keywords = "point contact reaction, silicide formation, repeating nucleation, nanowires, uphill diffusion, epitaxial reaction, EPITAXIAL SILICIDE, NUCLEATION, GROWTH, LAYER, STRAIN, COSI2",

author = "Yi-Chia Chou and Lih-Juann Chen and King-Ning Tu",

year = "2022",

month = sep,

day = "14",

doi = "10.1021/acs.nanolett.2c01265",

language = "English",

volume = "22",

pages = "6895–6899",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "17",

}

TY - JOUR

T1 - Uphill Diffusion Induced Point Contact Reaction in Si Nanowires

AU - Chou, Yi-Chia

AU - Chen, Lih-Juann

AU - Tu, King-Ning

PY - 2022/9/14

Y1 - 2022/9/14

N2 - The events of repeating nucleation in point contact reactions between nanowires of Si and Ni or Co have been revisited here due to uphill diffusion as well as an extremely high supersaturation, over a factor of 1000, needed for the nucleation. Also what is the diameter of the point contact needs to be defined. The stepwise growth of nanoscale epitaxial silicide can occur because the repeating nucleation events are restricted in nanoscale wires.

AB - The events of repeating nucleation in point contact reactions between nanowires of Si and Ni or Co have been revisited here due to uphill diffusion as well as an extremely high supersaturation, over a factor of 1000, needed for the nucleation. Also what is the diameter of the point contact needs to be defined. The stepwise growth of nanoscale epitaxial silicide can occur because the repeating nucleation events are restricted in nanoscale wires.

KW - point contact reaction

KW - silicide formation

KW - repeating nucleation

KW - nanowires

KW - uphill diffusion

KW - epitaxial reaction

KW - EPITAXIAL SILICIDE

KW - NUCLEATION

KW - GROWTH

KW - LAYER

KW - STRAIN

KW - COSI2

UR - http://www.scopus.com/inward/record.url?scp=85136669120&partnerID=8YFLogxK

UR - http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000844704200001

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85136669120&origin=recordpage

U2 - 10.1021/acs.nanolett.2c01265

DO - 10.1021/acs.nanolett.2c01265

M3 - RGC 21 - Publication in refereed journal

SN - 1530-6984

VL - 22

SP - 6895

EP - 6899

JO - Nano Letters

JF - Nano Letters

IS - 17

ER -

Uphill Diffusion Induced Point Contact Reaction in Si Nanowires

Abstract

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