磁存儲單元

Research output: Patents, Agreements and Assignments (RGC: 51, 52, 53)51_Patents granted (CityU only, data source from KTO)

View graph of relations

Author(s)

Detail(s)

Original languageChinese (Traditional)
Patent numberZL201080068817.2
Filing number2.0108E+11
Publication status
  • Accepted/In press/Filed - 27 Feb 2013
  • Published - 12 Apr 2017

Citation Format(s)

磁存儲單元. / RUOTOLO, Antonio (Inventor).

Patent No.: ZL201080068817.2. Apr 12, 2017.

Research output: Patents, Agreements and Assignments (RGC: 51, 52, 53)51_Patents granted (CityU only, data source from KTO)