Unlocking Cr3+-Cr3+ Coupling in Spinel : Ultrabroadband Near-Infrared Emission beyond 900 nm with High Efficiency and Thermal Stability
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
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Detail(s)
Original language | English |
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Pages (from-to) | 30185-30195 |
Number of pages | 11 |
Journal / Publication | ACS Applied Materials and Interfaces |
Volume | 16 |
Issue number | 23 |
Online published | 31 May 2024 |
Publication status | Published - 12 Jun 2024 |
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Abstract
Broadband near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) hold promising potential as next-generation compact, portable, and intelligent NIR light sources. Nonetheless, the lack of high-performance broadband NIR phosphors with an emission peak beyond 900 nm has severely hindered the development and widespread application of NIR pc-LEDs. This study presents a strategy for precise control of energy-state coupling in spinel solid solutions composed of MgxZn1-xGa2O4 to tune the NIR emissions of Cr3+ activators. By combining crystal field engineering and heavy doping, the Cr3+-Cr3+ ion pair emission from the 4T2 state is unlocked, giving rise to unusual broadband NIR emission spanning 650 and 1400 nm with an emission maximum of 913 nm and a full width at half-maximum (fwhm) of 213 nm. Under an optimal Mg/Zn ratio of 4:1, the sample achieves record-breaking performance, including high internal and external quantum efficiency (IQE = 83.9% and EQE = 35.7%) and excellent thermal stability (I423 K/I298 K = 75.8%). Encapsulating the as-obtained phosphors into prototype pc-LEDs yields an overwhelming NIR output power of 124.2 mW at a driving current of 840 mA and a photoelectric conversion efficiency (PCE) of 10.5% at 30 mA, rendering high performance in NIR imaging applications. © 2024 American Chemical Society.
Research Area(s)
- energy-state coupling, heavy doping, ion pair, NIR imaging, pc-LED
Citation Format(s)
Unlocking Cr3+-Cr3+ Coupling in Spinel: Ultrabroadband Near-Infrared Emission beyond 900 nm with High Efficiency and Thermal Stability. / Chen, Geng; Jin, Yahong; Yuan, Lifang et al.
In: ACS Applied Materials and Interfaces, Vol. 16, No. 23, 12.06.2024, p. 30185-30195.
In: ACS Applied Materials and Interfaces, Vol. 16, No. 23, 12.06.2024, p. 30185-30195.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review