Understanding the contact characteristics in single or multi-layer graphene devices: The impact of defects (carbon vacancies) and the asymmetric transportation behavior

W. J. Liu; M. F. Li; S. H. Xu; Q. Zhang; Y. H. Zhu; K. L. Pey; H. L. Hu; Z. X. Shen; X. Zou; J. L. Wang; J. Wei; H. L. Zhu; H. Y. Yu

doi:10.1109/IEDM.2010.5703420

Understanding the contact characteristics in single or multi-layer graphene devices: The impact of defects (carbon vacancies) and the asymmetric transportation behavior

W. J. Liu
, M. F. Li
, S. H. Xu
, Q. Zhang
, Y. H. Zhu
, K. L. Pey
, H. L. Hu
, Z. X. Shen
, X. Zou
, J. L. Wang
, J. Wei
, H. L. Zhu
, H. Y. Yu

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

8 Citations (Scopus)

Abstract

Process induced variation of contact resistance (R_c) in Ti/graphene (single or multi-layer) devices is investigated physically and electrically. It is proposed that the increased R_c can be attributed to the carbon defects (vacancies) created during SPUTTER process, which is evidenced by Raman spectra. For the first time, the asymmetric behaviors in hole and electron transportation regions in different metal/SLG devices are experimentally understood using scanning Kelvin probe microscopy technique. The asymmetric behavior in hole and electron transportation regions is attributed to the transition from p-p-p (n-p-n) to p-n-p (n-n-n) junction under the modulation of V_bg. ©2010 IEEE.

Original language	English
Title of host publication	2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages	23.3.1-23.3.4
DOIs	https://doi.org/10.1109/IEDM.2010.5703420
Publication status	Published - 2010
Externally published	Yes
Event	2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, United States Duration: 6 Dec 2010 → 8 Dec 2010 https://ieeexplore.ieee.org/document/5518476 https://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=5703280

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2010 IEEE International Electron Devices Meeting, IEDM 2010
Place	United States
City	San Francisco
Period	6/12/10 → 8/12/10
Internet address	https://ieeexplore.ieee.org/document/5518476 https://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=5703280

Bibliographical note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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10.1109/IEDM.2010.5703420

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Liu, W. J., Li, M. F., Xu, S. H., Zhang, Q., Zhu, Y. H., Pey, K. L., Hu, H. L., Shen, Z. X., Zou, X., Wang, J. L., Wei, J., Zhu, H. L., & Yu, H. Y. (2010). Understanding the contact characteristics in single or multi-layer graphene devices: The impact of defects (carbon vacancies) and the asymmetric transportation behavior. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 (pp. 23.3.1-23.3.4). Article 5703420 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703420

@inproceedings{c8548604b445407dbb13c392ef85d108,

title = "Understanding the contact characteristics in single or multi-layer graphene devices: The impact of defects (carbon vacancies) and the asymmetric transportation behavior",

abstract = "Process induced variation of contact resistance (Rc) in Ti/graphene (single or multi-layer) devices is investigated physically and electrically. It is proposed that the increased Rc can be attributed to the carbon defects (vacancies) created during SPUTTER process, which is evidenced by Raman spectra. For the first time, the asymmetric behaviors in hole and electron transportation regions in different metal/SLG devices are experimentally understood using scanning Kelvin probe microscopy technique. The asymmetric behavior in hole and electron transportation regions is attributed to the transition from p-p-p (n-p-n) to p-n-p (n-n-n) junction under the modulation of Vbg. {\textcopyright}2010 IEEE.",

author = "Liu, \{W. J.\} and Li, \{M. F.\} and Xu, \{S. H.\} and Q. Zhang and Zhu, \{Y. H.\} and Pey, \{K. L.\} and Hu, \{H. L.\} and Shen, \{Z. X.\} and X. Zou and Wang, \{J. L.\} and J. Wei and Zhu, \{H. L.\} and Yu, \{H. Y.\}",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].; 2010 IEEE International Electron Devices Meeting, IEDM 2010 ; Conference date: 06-12-2010 Through 08-12-2010",

year = "2010",

doi = "10.1109/IEDM.2010.5703420",

language = "English",

isbn = "9781424474196",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "23.3.1--23.3.4",

booktitle = "2010 IEEE International Electron Devices Meeting, IEDM 2010",

url = "https://ieeexplore.ieee.org/document/5518476, https://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=5703280",

}

Liu, WJ, Li, MF, Xu, SH, Zhang, Q, Zhu, YH, Pey, KL, Hu, HL, Shen, ZX, Zou, X, Wang, JL, Wei, J, Zhu, HL & Yu, HY 2010, Understanding the contact characteristics in single or multi-layer graphene devices: The impact of defects (carbon vacancies) and the asymmetric transportation behavior. in 2010 IEEE International Electron Devices Meeting, IEDM 2010., 5703420, Technical Digest - International Electron Devices Meeting, IEDM, pp. 23.3.1-23.3.4, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, California, United States, 6/12/10. https://doi.org/10.1109/IEDM.2010.5703420

Understanding the contact characteristics in single or multi-layer graphene devices: The impact of defects (carbon vacancies) and the asymmetric transportation behavior. / Liu, W. J.; Li, M. F.; Xu, S. H. et al.
2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. p. 23.3.1-23.3.4 5703420 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Understanding the contact characteristics in single or multi-layer graphene devices

T2 - 2010 IEEE International Electron Devices Meeting, IEDM 2010

AU - Liu, W. J.

AU - Li, M. F.

AU - Xu, S. H.

AU - Zhang, Q.

AU - Zhu, Y. H.

AU - Pey, K. L.

AU - Hu, H. L.

AU - Shen, Z. X.

AU - Zou, X.

AU - Wang, J. L.

AU - Wei, J.

AU - Zhu, H. L.

AU - Yu, H. Y.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2010

Y1 - 2010

N2 - Process induced variation of contact resistance (Rc) in Ti/graphene (single or multi-layer) devices is investigated physically and electrically. It is proposed that the increased Rc can be attributed to the carbon defects (vacancies) created during SPUTTER process, which is evidenced by Raman spectra. For the first time, the asymmetric behaviors in hole and electron transportation regions in different metal/SLG devices are experimentally understood using scanning Kelvin probe microscopy technique. The asymmetric behavior in hole and electron transportation regions is attributed to the transition from p-p-p (n-p-n) to p-n-p (n-n-n) junction under the modulation of Vbg. ©2010 IEEE.

AB - Process induced variation of contact resistance (Rc) in Ti/graphene (single or multi-layer) devices is investigated physically and electrically. It is proposed that the increased Rc can be attributed to the carbon defects (vacancies) created during SPUTTER process, which is evidenced by Raman spectra. For the first time, the asymmetric behaviors in hole and electron transportation regions in different metal/SLG devices are experimentally understood using scanning Kelvin probe microscopy technique. The asymmetric behavior in hole and electron transportation regions is attributed to the transition from p-p-p (n-p-n) to p-n-p (n-n-n) junction under the modulation of Vbg. ©2010 IEEE.

UR - https://www.scopus.com/pages/publications/79951843153

UR - https://www.scopus.com/pages/publications/79951843153#tab=impact

U2 - 10.1109/IEDM.2010.5703420

DO - 10.1109/IEDM.2010.5703420

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9781424474196

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 23.3.1-23.3.4

BT - 2010 IEEE International Electron Devices Meeting, IEDM 2010

Y2 - 6 December 2010 through 8 December 2010

ER -

Liu WJ, Li MF, Xu SH, Zhang Q, Zhu YH, Pey KL et al. Understanding the contact characteristics in single or multi-layer graphene devices: The impact of defects (carbon vacancies) and the asymmetric transportation behavior. In 2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. p. 23.3.1-23.3.4. 5703420. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2010.5703420

Understanding the contact characteristics in single or multi-layer graphene devices: The impact of defects (carbon vacancies) and the asymmetric transportation behavior

Abstract

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