Understanding large plastic deformation of SiC nanowires at room temperature

J. Wang, C. Lu, Q. Wang, P. Xiao, F. J. Ke, Y. L. Bai, Y. G. Shen, X. Z. Liao, H. J. Gao

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    11 Citations (Scopus)

    Abstract

    Tensile behaviors of SiC [111] nanowires with various possible microstructures have been investigated by molecular-dynamics simulations. The results show that the large plastic deformation in these nanowires is induced by the anti-parallel sliding of 3C grains along an ultrathin intergranular amorphous film parallel to the (111̄) plane and inclined at an angle of 19.47 ° with respect to the nanowire axis. The resulting large plastic deformation of SiC nanowires at room temperature is attributed to the stretching, breaking and re-forming of SiC bonds in the intergranular amorphous film, which is also evident from the sawtooth jumps in the stress-strain response. © EPLA, 2011.
    Original languageEnglish
    Article number63003
    JournalEPL
    Volume95
    Issue number6
    DOIs
    Publication statusPublished - Sept 2011

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