Understanding asymmetric transportation behavior in graphene field-effect transistors using scanning kelvin probe microscopy
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Article number | 5672574 |
Pages (from-to) | 128-130 |
Journal / Publication | IEEE Electron Device Letters |
Volume | 32 |
Issue number | 2 |
Publication status | Published - Feb 2011 |
Externally published | Yes |
Link(s)
Abstract
Scanning Kelvin probe microscopy (SKPM) is applied to experimentally understand the asymmetric behaviors in hole and electron transportation regions in graphene fieldeffect transistors (FETs). With gate modulation, the transition from p-p-p to p-n-p (for a Ag or Pd source/drain junction with graphene) or from n-p-n to n-n-n (for an Al source/drain junction with graphene) is verified by SKPM, which is believed to be responsible for the asymmetric transport. The odd resistance (Rodd) is positive for Ag (or Pd)/single-layer- graphene (SLG) FETs with Fintrinsic > 0, while Rodd is negative for Al/SLG devices with F intrinsic 0, where F intrinsic is defined as the work function difference between metal and intrinsic graphene. © 2010 IEEE.
Research Area(s)
- Asymmetric transport, field-effect transistors (FETs), graphene, scanning Kelvin probe microscopy (SKPM)
Bibliographic Note
Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
Citation Format(s)
Understanding asymmetric transportation behavior in graphene field-effect transistors using scanning kelvin probe microscopy. / Liu, W. J.; Yu, H. Y.; Xu, S. H. et al.
In: IEEE Electron Device Letters, Vol. 32, No. 2, 5672574, 02.2011, p. 128-130.
In: IEEE Electron Device Letters, Vol. 32, No. 2, 5672574, 02.2011, p. 128-130.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review