Understanding asymmetric transportation behavior in graphene field-effect transistors using scanning kelvin probe microscopy

W. J. Liu; H. Y. Yu; S. H. Xu; Q. Zhang; X. Zou; J. L. Wang; K. L. Pey; J. Wei; H. L. Zhu; M. F. Li

doi:10.1109/LED.2010.2093500

Understanding asymmetric transportation behavior in graphene field-effect transistors using scanning kelvin probe microscopy

W. J. Liu
, H. Y. Yu
, S. H. Xu
, Q. Zhang
, X. Zou
, J. L. Wang
, K. L. Pey
, J. Wei
, H. L. Zhu
, M. F. Li

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

15 Citations (Scopus)

Abstract

Scanning Kelvin probe microscopy (SKPM) is applied to experimentally understand the asymmetric behaviors in hole and electron transportation regions in graphene fieldeffect transistors (FETs). With gate modulation, the transition from p-p-p to p-n-p (for a Ag or Pd source/drain junction with graphene) or from n-p-n to n-n-n (for an Al source/drain junction with graphene) is verified by SKPM, which is believed to be responsible for the asymmetric transport. The odd resistance (R_odd) is positive for Ag (or Pd)/single-layer- graphene (SLG) FETs with F_intrinsic > 0, while Rodd is negative for Al/SLG devices with F intrinsic 0, where F intrinsic is defined as the work function difference between metal and intrinsic graphene. © 2010 IEEE.

Original language	English
Article number	5672574
Pages (from-to)	128-130
Journal	IEEE Electron Device Letters
Volume	32
Issue number	2
DOIs	https://doi.org/10.1109/LED.2010.2093500
Publication status	Published - Feb 2011
Externally published	Yes

Bibliographical note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Research Keywords

Asymmetric transport
field-effect transistors (FETs)
graphene
scanning Kelvin probe microscopy (SKPM)

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10.1109/LED.2010.2093500

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title = "Understanding asymmetric transportation behavior in graphene field-effect transistors using scanning kelvin probe microscopy",

abstract = "Scanning Kelvin probe microscopy (SKPM) is applied to experimentally understand the asymmetric behaviors in hole and electron transportation regions in graphene fieldeffect transistors (FETs). With gate modulation, the transition from p-p-p to p-n-p (for a Ag or Pd source/drain junction with graphene) or from n-p-n to n-n-n (for an Al source/drain junction with graphene) is verified by SKPM, which is believed to be responsible for the asymmetric transport. The odd resistance (Rodd) is positive for Ag (or Pd)/single-layer- graphene (SLG) FETs with Fintrinsic > 0, while Rodd is negative for Al/SLG devices with F intrinsic 0, where F intrinsic is defined as the work function difference between metal and intrinsic graphene. {\textcopyright} 2010 IEEE.",

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T1 - Understanding asymmetric transportation behavior in graphene field-effect transistors using scanning kelvin probe microscopy

AU - Liu, W. J.

AU - Yu, H. Y.

AU - Xu, S. H.

AU - Zhang, Q.

AU - Zou, X.

AU - Wang, J. L.

AU - Pey, K. L.

AU - Wei, J.

AU - Zhu, H. L.

AU - Li, M. F.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2011/2

Y1 - 2011/2

N2 - Scanning Kelvin probe microscopy (SKPM) is applied to experimentally understand the asymmetric behaviors in hole and electron transportation regions in graphene fieldeffect transistors (FETs). With gate modulation, the transition from p-p-p to p-n-p (for a Ag or Pd source/drain junction with graphene) or from n-p-n to n-n-n (for an Al source/drain junction with graphene) is verified by SKPM, which is believed to be responsible for the asymmetric transport. The odd resistance (Rodd) is positive for Ag (or Pd)/single-layer- graphene (SLG) FETs with Fintrinsic > 0, while Rodd is negative for Al/SLG devices with F intrinsic 0, where F intrinsic is defined as the work function difference between metal and intrinsic graphene. © 2010 IEEE.

AB - Scanning Kelvin probe microscopy (SKPM) is applied to experimentally understand the asymmetric behaviors in hole and electron transportation regions in graphene fieldeffect transistors (FETs). With gate modulation, the transition from p-p-p to p-n-p (for a Ag or Pd source/drain junction with graphene) or from n-p-n to n-n-n (for an Al source/drain junction with graphene) is verified by SKPM, which is believed to be responsible for the asymmetric transport. The odd resistance (Rodd) is positive for Ag (or Pd)/single-layer- graphene (SLG) FETs with Fintrinsic > 0, while Rodd is negative for Al/SLG devices with F intrinsic 0, where F intrinsic is defined as the work function difference between metal and intrinsic graphene. © 2010 IEEE.

KW - Asymmetric transport

KW - field-effect transistors (FETs)

KW - graphene

KW - scanning Kelvin probe microscopy (SKPM)

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U2 - 10.1109/LED.2010.2093500

DO - 10.1109/LED.2010.2093500

M3 - RGC 21 - Publication in refereed journal

SN - 0741-3106

VL - 32

SP - 128

EP - 130

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

M1 - 5672574

ER -

Understanding asymmetric transportation behavior in graphene field-effect transistors using scanning kelvin probe microscopy

Abstract

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