Ultraviolet photoelectron spectroscopy investigation of interface formation in an indium-tin oxide/fluorocarbon/organic semiconductor contact

S. W. Tong; K. M. Lau; H. Y. Sun; M. K. Fung; C. S. Lee; Y. Lifshitz; S. T. Lee

doi:10.1016/j.apsusc.2005.05.065

Ultraviolet photoelectron spectroscopy investigation of interface formation in an indium-tin oxide/fluorocarbon/organic semiconductor contact

S. W. Tong, K. M. Lau, H. Y. Sun, M. K. Fung, C. S. Lee, Y. Lifshitz, S. T. Lee

Centre of Super-Diamond and Advanced Films

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

14 Citations (Scopus)

Abstract

It has been demonstrated that hole-injection in organic light-emitting devices (OLEDs) can be enhanced by inserting a UV-illuminated fluorocarbon (CF_x) layer between indium-tin oxide (ITO) and organic hole-transporting layer (HTL). In this work, the process of interface formation and electronic properties of the ITO/CF_x/HTL interface were investigated with ultraviolet photoelectron spectroscopy. It was found that UV-illuminated fluorocarbon layer decreases the hole-injection barrier from ITO to α-napthylphenylbiphenyl diamine (NPB). Energy level diagrams deduced from the ultraviolet photoelectron spectroscopy (UPS) spectra show that the hole-injection barrier in ITO/UV-treated CF_x/NPB is the smallest (0.46 eV), compared to that in the ITO/untreated CF_x/NPB (0.60 eV) and the standard ITO/NPB interface (0.68 eV). The improved current density-voltage (I-V) characteristics in the UV-treated CF_x-coated ITO contact are consistent with its smallest barrier height. © 2005 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	3806-3811
Journal	Applied Surface Science
Volume	252
Issue number	10
DOIs	https://doi.org/10.1016/j.apsusc.2005.05.065
Publication status	Published - 15 Mar 2006

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title = "Ultraviolet photoelectron spectroscopy investigation of interface formation in an indium-tin oxide/fluorocarbon/organic semiconductor contact",

abstract = "It has been demonstrated that hole-injection in organic light-emitting devices (OLEDs) can be enhanced by inserting a UV-illuminated fluorocarbon (CFx) layer between indium-tin oxide (ITO) and organic hole-transporting layer (HTL). In this work, the process of interface formation and electronic properties of the ITO/CFx/HTL interface were investigated with ultraviolet photoelectron spectroscopy. It was found that UV-illuminated fluorocarbon layer decreases the hole-injection barrier from ITO to α-napthylphenylbiphenyl diamine (NPB). Energy level diagrams deduced from the ultraviolet photoelectron spectroscopy (UPS) spectra show that the hole-injection barrier in ITO/UV-treated CFx/NPB is the smallest (0.46 eV), compared to that in the ITO/untreated CFx/NPB (0.60 eV) and the standard ITO/NPB interface (0.68 eV). The improved current density-voltage (I-V) characteristics in the UV-treated CFx-coated ITO contact are consistent with its smallest barrier height. {\textcopyright} 2005 Elsevier B.V. All rights reserved.",

author = "Tong, {S. W.} and Lau, {K. M.} and Sun, {H. Y.} and Fung, {M. K.} and Lee, {C. S.} and Y. Lifshitz and Lee, {S. T.}",

year = "2006",

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language = "English",

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Ultraviolet photoelectron spectroscopy investigation of interface formation in an indium-tin oxide/fluorocarbon/organic semiconductor contact. / Tong, S. W.; Lau, K. M.; Sun, H. Y. et al.
In: Applied Surface Science, Vol. 252, No. 10, 15.03.2006, p. 3806-3811.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

TY - JOUR

T1 - Ultraviolet photoelectron spectroscopy investigation of interface formation in an indium-tin oxide/fluorocarbon/organic semiconductor contact

AU - Tong, S. W.

AU - Lau, K. M.

AU - Sun, H. Y.

AU - Fung, M. K.

AU - Lee, C. S.

AU - Lifshitz, Y.

AU - Lee, S. T.

PY - 2006/3/15

Y1 - 2006/3/15

N2 - It has been demonstrated that hole-injection in organic light-emitting devices (OLEDs) can be enhanced by inserting a UV-illuminated fluorocarbon (CFx) layer between indium-tin oxide (ITO) and organic hole-transporting layer (HTL). In this work, the process of interface formation and electronic properties of the ITO/CFx/HTL interface were investigated with ultraviolet photoelectron spectroscopy. It was found that UV-illuminated fluorocarbon layer decreases the hole-injection barrier from ITO to α-napthylphenylbiphenyl diamine (NPB). Energy level diagrams deduced from the ultraviolet photoelectron spectroscopy (UPS) spectra show that the hole-injection barrier in ITO/UV-treated CFx/NPB is the smallest (0.46 eV), compared to that in the ITO/untreated CFx/NPB (0.60 eV) and the standard ITO/NPB interface (0.68 eV). The improved current density-voltage (I-V) characteristics in the UV-treated CFx-coated ITO contact are consistent with its smallest barrier height. © 2005 Elsevier B.V. All rights reserved.

AB - It has been demonstrated that hole-injection in organic light-emitting devices (OLEDs) can be enhanced by inserting a UV-illuminated fluorocarbon (CFx) layer between indium-tin oxide (ITO) and organic hole-transporting layer (HTL). In this work, the process of interface formation and electronic properties of the ITO/CFx/HTL interface were investigated with ultraviolet photoelectron spectroscopy. It was found that UV-illuminated fluorocarbon layer decreases the hole-injection barrier from ITO to α-napthylphenylbiphenyl diamine (NPB). Energy level diagrams deduced from the ultraviolet photoelectron spectroscopy (UPS) spectra show that the hole-injection barrier in ITO/UV-treated CFx/NPB is the smallest (0.46 eV), compared to that in the ITO/untreated CFx/NPB (0.60 eV) and the standard ITO/NPB interface (0.68 eV). The improved current density-voltage (I-V) characteristics in the UV-treated CFx-coated ITO contact are consistent with its smallest barrier height. © 2005 Elsevier B.V. All rights reserved.

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DO - 10.1016/j.apsusc.2005.05.065

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JO - Applied Surface Science

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Ultraviolet photoelectron spectroscopy investigation of interface formation in an indium-tin oxide/fluorocarbon/organic semiconductor contact

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