Ultraviolet photoelectron spectroscopy investigation of interface formation in an indium-tin oxide/fluorocarbon/organic semiconductor contact

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

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Author(s)

  • S. W. Tong
  • K. M. Lau
  • H. Y. Sun
  • M. K. Fung
  • Y. Lifshitz
  • S. T. Lee

Detail(s)

Original languageEnglish
Pages (from-to)3806-3811
Journal / PublicationApplied Surface Science
Volume252
Issue number10
Publication statusPublished - 15 Mar 2006

Abstract

It has been demonstrated that hole-injection in organic light-emitting devices (OLEDs) can be enhanced by inserting a UV-illuminated fluorocarbon (CFx) layer between indium-tin oxide (ITO) and organic hole-transporting layer (HTL). In this work, the process of interface formation and electronic properties of the ITO/CFx/HTL interface were investigated with ultraviolet photoelectron spectroscopy. It was found that UV-illuminated fluorocarbon layer decreases the hole-injection barrier from ITO to α-napthylphenylbiphenyl diamine (NPB). Energy level diagrams deduced from the ultraviolet photoelectron spectroscopy (UPS) spectra show that the hole-injection barrier in ITO/UV-treated CFx/NPB is the smallest (0.46 eV), compared to that in the ITO/untreated CFx/NPB (0.60 eV) and the standard ITO/NPB interface (0.68 eV). The improved current density-voltage (I-V) characteristics in the UV-treated CFx-coated ITO contact are consistent with its smallest barrier height. © 2005 Elsevier B.V. All rights reserved.

Citation Format(s)

Ultraviolet photoelectron spectroscopy investigation of interface formation in an indium-tin oxide/fluorocarbon/organic semiconductor contact. / Tong, S. W.; Lau, K. M.; Sun, H. Y.; Fung, M. K.; Lee, C. S.; Lifshitz, Y.; Lee, S. T.

In: Applied Surface Science, Vol. 252, No. 10, 15.03.2006, p. 3806-3811.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review