Ultraviolet photoelectron spectroscopy investigation of interface formation in an indium-tin oxide/fluorocarbon/organic semiconductor contact

S. W. Tong; K. M. Lau; H. Y. Sun; M. K. Fung; C. S. Lee; Y. Lifshitz; S. T. Lee

doi:10.1016/j.apsusc.2005.05.065

Author(s)

S. W. Tong
K. M. Lau
H. Y. Sun
M. K. Fung
Y. Lifshitz
S. T. Lee

Related Research Unit(s)

Centre of Super-Diamond and Advanced Films

Detail(s)

Original language	English
Pages (from-to)	3806-3811
Journal / Publication	Applied Surface Science
Volume	252
Issue number	10
Publication status	Published - 15 Mar 2006

Link(s)

DOI	DOI https://doi.org/10.1016/j.apsusc.2005.05.065 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-32644442984&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(aa9b79e4-31e0-443e-9249-0589d00b35c2).html

Abstract

It has been demonstrated that hole-injection in organic light-emitting devices (OLEDs) can be enhanced by inserting a UV-illuminated fluorocarbon (CF_x) layer between indium-tin oxide (ITO) and organic hole-transporting layer (HTL). In this work, the process of interface formation and electronic properties of the ITO/CF_x/HTL interface were investigated with ultraviolet photoelectron spectroscopy. It was found that UV-illuminated fluorocarbon layer decreases the hole-injection barrier from ITO to α-napthylphenylbiphenyl diamine (NPB). Energy level diagrams deduced from the ultraviolet photoelectron spectroscopy (UPS) spectra show that the hole-injection barrier in ITO/UV-treated CF_x/NPB is the smallest (0.46 eV), compared to that in the ITO/untreated CF_x/NPB (0.60 eV) and the standard ITO/NPB interface (0.68 eV). The improved current density-voltage (I-V) characteristics in the UV-treated CF_x-coated ITO contact are consistent with its smallest barrier height. © 2005 Elsevier B.V. All rights reserved.

Citation Format(s)

[ RIS ] [ BibTeX ]

Ultraviolet photoelectron spectroscopy investigation of interface formation in an indium-tin oxide/fluorocarbon/organic semiconductor contact. / Tong, S. W.; Lau, K. M.; Sun, H. Y. et al.
In: Applied Surface Science, Vol. 252, No. 10, 15.03.2006, p. 3806-3811.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Tong, SW, Lau, KM, Sun, HY, Fung, MK, Lee, CS, Lifshitz, Y & Lee, ST 2006, 'Ultraviolet photoelectron spectroscopy investigation of interface formation in an indium-tin oxide/fluorocarbon/organic semiconductor contact', Applied Surface Science, vol. 252, no. 10, pp. 3806-3811. https://doi.org/10.1016/j.apsusc.2005.05.065

Tong, S. W., Lau, K. M., Sun, H. Y., Fung, M. K., Lee, C. S., Lifshitz, Y., & Lee, S. T. (2006). Ultraviolet photoelectron spectroscopy investigation of interface formation in an indium-tin oxide/fluorocarbon/organic semiconductor contact. Applied Surface Science, 252(10), 3806-3811. https://doi.org/10.1016/j.apsusc.2005.05.065

Tong SW, Lau KM, Sun HY, Fung MK, Lee CS, Lifshitz Y et al. Ultraviolet photoelectron spectroscopy investigation of interface formation in an indium-tin oxide/fluorocarbon/organic semiconductor contact. Applied Surface Science. 2006 Mar 15;252(10):3806-3811. doi: 10.1016/j.apsusc.2005.05.065

Tong, S. W. ; Lau, K. M. ; Sun, H. Y. et al. / Ultraviolet photoelectron spectroscopy investigation of interface formation in an indium-tin oxide/fluorocarbon/organic semiconductor contact. In: Applied Surface Science. 2006 ; Vol. 252, No. 10. pp. 3806-3811.