TY - GEN
T1 - Ultrasonic surface mechanical attrition of commercially pure Ti to induce nanocrystalline surface layer
AU - Mansoor, M.
AU - Lu, J.
PY - 2010
Y1 - 2010
N2 - In the domain of incremental nanotechnology, surface mechanical attrition treatment is a technique which can transform superficial structure of a material to nanocrystalline without changing the chemical composition. This study is a part of the development and implementation of the technique by using ultrasonic vibrations. The material used is pure titanium in rolled and annealed condition. The nanocrystalline structure is characterized using X-ray diffraction (XRD), and transmission electron microscopy (TEM). The measured grain size is in the order of 5∼60 nm. A correlation in the results of XRD and TEM is also discussed.
AB - In the domain of incremental nanotechnology, surface mechanical attrition treatment is a technique which can transform superficial structure of a material to nanocrystalline without changing the chemical composition. This study is a part of the development and implementation of the technique by using ultrasonic vibrations. The material used is pure titanium in rolled and annealed condition. The nanocrystalline structure is characterized using X-ray diffraction (XRD), and transmission electron microscopy (TEM). The measured grain size is in the order of 5∼60 nm. A correlation in the results of XRD and TEM is also discussed.
KW - Nanocrystalline structure
KW - Surface mechanical attrition treatment
KW - TEM
KW - Titanium
KW - XRD
UR - http://www.scopus.com/inward/record.url?scp=77955437649&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-77955437649&origin=recordpage
U2 - 10.4028/www.scientific.net/KEM.442.152
DO - 10.4028/www.scientific.net/KEM.442.152
M3 - RGC 32 - Refereed conference paper (with host publication)
SN - 0878492682
SN - 9780878492688
VL - 442
T3 - Key Engineering Materials
SP - 152
EP - 157
BT - Advanced Materials XI
T2 - 11th International Symposium on Advanced Materials, ISAM-2009
Y2 - 8 August 2009 through 12 August 2009
ER -