Ultrasensitive 2D Bi2O2Se Phototransistors on Silicon Substrates

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

184 Scopus Citations
View graph of relations

Author(s)

  • Qundong Fu
  • Chao Zhu
  • Xiaoxu Zhao
  • Xingli Wang
  • Apoorva Chaturvedi
  • Chao Zhu
  • Xiaowei Wang
  • Qingsheng Zeng
  • Jiadong Zhou
  • Fucai Liu
  • Beng Kang Tay
  • Stephen J. Pennycook
  • Zheng Liu

Detail(s)

Original languageEnglish
Article number1804945
Journal / PublicationAdvanced Materials
Volume31
Issue number1
Online published12 Nov 2018
Publication statusPublished - 4 Jan 2019
Externally publishedYes

Abstract

2D materials are considered as intriguing building blocks for next-generation optoelectronic devices. However, their photoresponse performance still needs to be improved for practical applications. Here, ultrasensitive 2D phototransistors are reported employing chemical vapor deposition (CVD)-grown 2D Bi2O2Se transferred onto silicon substrates with a noncorrosive transfer method. The as-transferred Bi2O2Se preserves high quality in contrast to the serious quality degradation in hydrofluoric-acid-assisted transfer. The phototransistors show a responsivity of 3.5 × 104 A W−1, a photoconductive gain of more than 104, and a time response in the order of sub-millisecond. With back gating of the silicon substrate, the dark current can be reduced to several pA. This yields an ultrahigh sensitivity with a specific detectivity of 9.0 × 1013 Jones, which is one of the highest values among 2D material photodetectors and two orders of magnitude higher than that of other CVD-grown 2D materials. The high performance of the phototransistor shown here together with the developed unique transfer technique are promising for the development of novel 2D-material-based optoelectronic applications as well as integrating with state-of-the-art silicon photonic and electronic technologies.

Research Area(s)

  • 2D materials, bismuth oxyselenide, field-effect transistors, phototransistors, silicon substrates

Citation Format(s)

Ultrasensitive 2D Bi2O2Se Phototransistors on Silicon Substrates. / Fu, Qundong; Zhu, Chao; Zhao, Xiaoxu et al.
In: Advanced Materials, Vol. 31, No. 1, 1804945, 04.01.2019.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review