Ultralow trap density FAPbBr3 perovskite films for efficient light-emitting diodes and amplified spontaneous emission

Desui Chen; Aleksandr A. Sergeev; Nan Zhang; Lingyi Ke; Ye Wu; Bing Tang; Chun Ki Tao; Haochen Liu; Guangruixing Zou; Zhaohua Zhu; Yidan An; Yun Li; Arsenii Portniagin; Kseniia A. Sergeeva; Kam Sing Wong; Hin-Lap Yip; Andrey L. Rogach

doi:10.1038/s41467-025-56557-8

Ultralow trap density FAPbBr₃ perovskite films for efficient light-emitting diodes and amplified spontaneous emission

Desui Chen, Aleksandr A. Sergeev, Nan Zhang, Lingyi Ke, Ye Wu, Bing Tang, Chun Ki Tao, Haochen Liu, Guangruixing Zou, Zhaohua Zhu, Yidan An, Yun Li, Arsenii Portniagin, Kseniia A. Sergeeva, Kam Sing Wong, Hin-Lap Yip^*, Andrey L. Rogach^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

6 Citations (Scopus)

33 Downloads (CityUHK Scholars)

Abstract

Solution-processed metal halide perovskites are widely studied for their potential in high-efficiency light-emitting diodes, yet they are facing several challenges like insufficient brightness, short operational lifetimes, and reduced power conversion efficiency under practical operation conditions. Here, we develop an interfacial amidation reaction on sacrificial ZnO substrates to produce perovskite films with low trap density (1.2 × 10¹⁰cm⁻³), and implement a device structure featuring a mono-molecular hole-injection layer and an all-inorganic bi-layered electron-injection layer. This design leads to green perovskite light-emitting diodes with a brightness of ~ 312,000 cd m⁻², a half-lifetime of 350 h at 1000 cd m⁻², and a power conversion efficiency of 15.6% at a current density of 300 mA cm⁻². Furthermore, the perovskite films show a low amplified spontaneous emission threshold of 13 μJ cm⁻². Thus, our approach significantly advances the performance of green perovskite light-emitting diodes and opens up an avenue toward perovskite-based electrically pumped lasers. © The Author(s) 2025.

Original language	English
Article number	2367
Journal	Nature Communications
Volume	16
Online published	10 Mar 2025
DOIs	https://doi.org/10.1038/s41467-025-56557-8
Publication status	Published - 2025

Funding

We acknowledge financial support from the Research Grant Council of Hong Kong S.A.R. (C7035-20G and CityU 11314122), and from the Innovation and Technology Fund of Hong Kong S.A.R. (MHP/068/21). Open Access was made possible with partial support from the Open Access Publishing Fund of the City University of Hong Kong.

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This full text is made available under CC-BY-NC-ND 4.0. https://creativecommons.org/licenses/by-nc-nd/4.0/

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Chen, D., Sergeev, A. A., Zhang, N., Ke, L., Wu, Y., Tang, B., Tao, C. K., Liu, H., Zou, G., Zhu, Z., An, Y., Li, Y., Portniagin, A., Sergeeva, K. A., Wong, K. S., Yip, H.-L., & Rogach, A. L. (2025). Ultralow trap density FAPbBr₃ perovskite films for efficient light-emitting diodes and amplified spontaneous emission. Nature Communications, 16, Article 2367. https://doi.org/10.1038/s41467-025-56557-8

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title = "Ultralow trap density FAPbBr3 perovskite films for efficient light-emitting diodes and amplified spontaneous emission",

abstract = "Solution-processed metal halide perovskites are widely studied for their potential in high-efficiency light-emitting diodes, yet they are facing several challenges like insufficient brightness, short operational lifetimes, and reduced power conversion efficiency under practical operation conditions. Here, we develop an interfacial amidation reaction on sacrificial ZnO substrates to produce perovskite films with low trap density (1.2 × 1010cm−3), and implement a device structure featuring a mono-molecular hole-injection layer and an all-inorganic bi-layered electron-injection layer. This design leads to green perovskite light-emitting diodes with a brightness of ~ 312,000 cd m−2, a half-lifetime of 350 h at 1000 cd m−2, and a power conversion efficiency of 15.6% at a current density of 300 mA cm−2. Furthermore, the perovskite films show a low amplified spontaneous emission threshold of 13 μJ cm−2. Thus, our approach significantly advances the performance of green perovskite light-emitting diodes and opens up an avenue toward perovskite-based electrically pumped lasers. {\textcopyright} The Author(s) 2025.",

author = "Desui Chen and Sergeev, {Aleksandr A.} and Nan Zhang and Lingyi Ke and Ye Wu and Bing Tang and Tao, {Chun Ki} and Haochen Liu and Guangruixing Zou and Zhaohua Zhu and Yidan An and Yun Li and Arsenii Portniagin and Sergeeva, {Kseniia A.} and Wong, {Kam Sing} and Hin-Lap Yip and Rogach, {Andrey L.}",

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journal = "Nature Communications",

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Chen, D, Sergeev, AA, Zhang, N , Ke, L, Wu, Y, Tang, B, Tao, CK, Liu, H , Zou, G , Zhu, Z, An, Y, Li, Y , Portniagin, A , Sergeeva, KA, Wong, KS, Yip, H-L & Rogach, AL 2025, 'Ultralow trap density FAPbBr₃ perovskite films for efficient light-emitting diodes and amplified spontaneous emission', Nature Communications, vol. 16, 2367. https://doi.org/10.1038/s41467-025-56557-8

TY - JOUR

T1 - Ultralow trap density FAPbBr3 perovskite films for efficient light-emitting diodes and amplified spontaneous emission

AU - Chen, Desui

AU - Sergeev, Aleksandr A.

AU - Zhang, Nan

AU - Ke, Lingyi

AU - Wu, Ye

AU - Tang, Bing

AU - Tao, Chun Ki

AU - Liu, Haochen

AU - Zou, Guangruixing

AU - Zhu, Zhaohua

AU - An, Yidan

AU - Li, Yun

AU - Portniagin, Arsenii

AU - Sergeeva, Kseniia A.

AU - Wong, Kam Sing

AU - Yip, Hin-Lap

AU - Rogach, Andrey L.

PY - 2025

Y1 - 2025

N2 - Solution-processed metal halide perovskites are widely studied for their potential in high-efficiency light-emitting diodes, yet they are facing several challenges like insufficient brightness, short operational lifetimes, and reduced power conversion efficiency under practical operation conditions. Here, we develop an interfacial amidation reaction on sacrificial ZnO substrates to produce perovskite films with low trap density (1.2 × 1010cm−3), and implement a device structure featuring a mono-molecular hole-injection layer and an all-inorganic bi-layered electron-injection layer. This design leads to green perovskite light-emitting diodes with a brightness of ~ 312,000 cd m−2, a half-lifetime of 350 h at 1000 cd m−2, and a power conversion efficiency of 15.6% at a current density of 300 mA cm−2. Furthermore, the perovskite films show a low amplified spontaneous emission threshold of 13 μJ cm−2. Thus, our approach significantly advances the performance of green perovskite light-emitting diodes and opens up an avenue toward perovskite-based electrically pumped lasers. © The Author(s) 2025.

AB - Solution-processed metal halide perovskites are widely studied for their potential in high-efficiency light-emitting diodes, yet they are facing several challenges like insufficient brightness, short operational lifetimes, and reduced power conversion efficiency under practical operation conditions. Here, we develop an interfacial amidation reaction on sacrificial ZnO substrates to produce perovskite films with low trap density (1.2 × 1010cm−3), and implement a device structure featuring a mono-molecular hole-injection layer and an all-inorganic bi-layered electron-injection layer. This design leads to green perovskite light-emitting diodes with a brightness of ~ 312,000 cd m−2, a half-lifetime of 350 h at 1000 cd m−2, and a power conversion efficiency of 15.6% at a current density of 300 mA cm−2. Furthermore, the perovskite films show a low amplified spontaneous emission threshold of 13 μJ cm−2. Thus, our approach significantly advances the performance of green perovskite light-emitting diodes and opens up an avenue toward perovskite-based electrically pumped lasers. © The Author(s) 2025.

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SN - 2041-1723

VL - 16

JO - Nature Communications

JF - Nature Communications

M1 - 2367

ER -

Ultralow trap density FAPbBr₃ perovskite films for efficient light-emitting diodes and amplified spontaneous emission

Abstract

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GRF: Optical and Device Architecture Engineering for High-Performance White Perovskite Light-emitting Devices

CRF-ExtU-Lead: Low-dimensional Perovskite Materials for Efficient and Stable Light Emitting Diodes: Materials, Devices and Fundamental Understanding

ITF: Core/shell Perovskite Quantum Dots with Excellent Stability and Their Application to Light-emitting Displays

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Ultralow trap density FAPbBr3 perovskite films for efficient light-emitting diodes and amplified spontaneous emission

Abstract

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Publisher's Copyright Statement

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Projects

GRF: Optical and Device Architecture Engineering for High-Performance White Perovskite Light-emitting Devices

CRF-ExtU-Lead: Low-dimensional Perovskite Materials for Efficient and Stable Light Emitting Diodes: Materials, Devices and Fundamental Understanding

ITF: Core/shell Perovskite Quantum Dots with Excellent Stability and Their Application to Light-emitting Displays

Cite this

Ultralow trap density FAPbBr₃ perovskite films for efficient light-emitting diodes and amplified spontaneous emission