Ultralow-threshold field emission from oriented nanostructured GaN films on Si substrate

Wei Zhao; Ru-Zhi Wang; Xue-Mei Song; Hao Wang; Bo Wang; Hui Yan; Paul K. Chu

doi:10.1063/1.3352556

Ultralow-threshold field emission from oriented nanostructured GaN films on Si substrate

Wei Zhao, Ru-Zhi Wang, Xue-Mei Song, Hao Wang, Bo Wang, Hui Yan, Paul K. Chu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

15 Citations (Scopus)

Abstract

A series of nanostructured GaN Films have been prepared on Si substrates. Field emission measurements show that the oriented nanostructured GaN film with a thickness of 40 nm has an ultralow threshold field of 1.2 V/μm at 1 mA/ cm² and yields a stable emission current of 40 mA/ cm² at 2.8 V/μm, which is comparable to those of carbon nanotubes. A polarization field emission enhancement mechanism with ballistic electron transport is proposed to explain the origin of this ultralow-threshold field emission phenomenon. © 2010 American Institute of Physics.

Original language	English
Article number	92101
Journal	Applied Physics Letters
Volume	96
Issue number	9
DOIs	https://doi.org/10.1063/1.3352556
Publication status	Published - 2010

Access Output

10.1063/1.3352556

Other Access Options

Check CityUHK Library

Permanent Link

Right click to copy link

Cite this

@article{cc09eb3684cc4363a14f1a2494a50491,

title = "Ultralow-threshold field emission from oriented nanostructured GaN films on Si substrate",

abstract = "A series of nanostructured GaN Films have been prepared on Si substrates. Field emission measurements show that the oriented nanostructured GaN film with a thickness of 40 nm has an ultralow threshold field of 1.2 V/μm at 1 mA/ cm2 and yields a stable emission current of 40 mA/ cm2 at 2.8 V/μm, which is comparable to those of carbon nanotubes. A polarization field emission enhancement mechanism with ballistic electron transport is proposed to explain the origin of this ultralow-threshold field emission phenomenon. {\textcopyright} 2010 American Institute of Physics.",

author = "Wei Zhao and Ru-Zhi Wang and Xue-Mei Song and Hao Wang and Bo Wang and Hui Yan and Chu, {Paul K.}",

year = "2010",

doi = "10.1063/1.3352556",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Ultralow-threshold field emission from oriented nanostructured GaN films on Si substrate

AU - Zhao, Wei

AU - Wang, Ru-Zhi

AU - Song, Xue-Mei

AU - Wang, Hao

AU - Wang, Bo

AU - Yan, Hui

AU - Chu, Paul K.

PY - 2010

Y1 - 2010

N2 - A series of nanostructured GaN Films have been prepared on Si substrates. Field emission measurements show that the oriented nanostructured GaN film with a thickness of 40 nm has an ultralow threshold field of 1.2 V/μm at 1 mA/ cm2 and yields a stable emission current of 40 mA/ cm2 at 2.8 V/μm, which is comparable to those of carbon nanotubes. A polarization field emission enhancement mechanism with ballistic electron transport is proposed to explain the origin of this ultralow-threshold field emission phenomenon. © 2010 American Institute of Physics.

AB - A series of nanostructured GaN Films have been prepared on Si substrates. Field emission measurements show that the oriented nanostructured GaN film with a thickness of 40 nm has an ultralow threshold field of 1.2 V/μm at 1 mA/ cm2 and yields a stable emission current of 40 mA/ cm2 at 2.8 V/μm, which is comparable to those of carbon nanotubes. A polarization field emission enhancement mechanism with ballistic electron transport is proposed to explain the origin of this ultralow-threshold field emission phenomenon. © 2010 American Institute of Physics.

UR - http://www.scopus.com/inward/record.url?scp=77949412627&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-77949412627&origin=recordpage

U2 - 10.1063/1.3352556

DO - 10.1063/1.3352556

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 92101

ER -

Ultralow-threshold field emission from oriented nanostructured GaN films on Si substrate

Abstract

Access Output

Other Access Options

Permanent Link

Other Files and Links

Fingerprint

Cite this