Ultrahigh Sensitive Piezotronic Strain Sensors Based on a ZnSnO3 Nanowire/Microwire

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Jyh Ming Wu
  • Cheng-Ying Chen
  • Yan Zhang
  • Kuan-Hsueh Chen
  • Ya Yang
  • Youfan Hu
  • Zhong Lin Wang

Detail(s)

Original languageEnglish
Pages (from-to)4369-4374
Journal / PublicationACS Nano
Volume6
Issue number5
Online published7 Apr 2012
Publication statusPublished - 22 May 2012
Externally publishedYes

Abstract

We demonstrated a flexible strain sensor based on ZnSnO3 nanowires/microwires for the first time. High-resolution transmission electron microscopy indicates that the ZnSnO3 belongs to a rhombohedral structure with an R3c space group and is grown along the [001] axis. On the basis of our experimental observation and theoretical calculation, the characteristic I-V curves of ZnSnO3 revealed that our strain sensors had ultrahigh sensitivity, which is attributed to the piezopotential-modulated change in Schottky barrier height (SBH), that is, the piezotronic effect. The on/off ratio of our device is ∼587, and a gauge factor of 3740 has been demonstrated, which is 19 times higher than that of Si and three times higher than those of carbon nanotubes and ZnO nanowires.

Research Area(s)

  • flexible, gauge factor, nanowires/microwires, strain sensor, ZnSnO3

Citation Format(s)

Ultrahigh Sensitive Piezotronic Strain Sensors Based on a ZnSnO3 Nanowire/Microwire. / Wu, Jyh Ming; Chen, Cheng-Ying; Zhang, Yan et al.

In: ACS Nano, Vol. 6, No. 5, 22.05.2012, p. 4369-4374.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review