Ultrahigh Sensitive Piezotronic Strain Sensors Based on a ZnSnO3 Nanowire/Microwire
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Pages (from-to) | 4369-4374 |
Journal / Publication | ACS Nano |
Volume | 6 |
Issue number | 5 |
Online published | 7 Apr 2012 |
Publication status | Published - 22 May 2012 |
Externally published | Yes |
Link(s)
Abstract
We demonstrated a flexible strain sensor based on ZnSnO3 nanowires/microwires for the first time. High-resolution transmission electron microscopy indicates that the ZnSnO3 belongs to a rhombohedral structure with an R3c space group and is grown along the [001] axis. On the basis of our experimental observation and theoretical calculation, the characteristic I-V curves of ZnSnO3 revealed that our strain sensors had ultrahigh sensitivity, which is attributed to the piezopotential-modulated change in Schottky barrier height (SBH), that is, the piezotronic effect. The on/off ratio of our device is ∼587, and a gauge factor of 3740 has been demonstrated, which is 19 times higher than that of Si and three times higher than those of carbon nanotubes and ZnO nanowires.
Research Area(s)
- flexible, gauge factor, nanowires/microwires, strain sensor, ZnSnO3
Citation Format(s)
Ultrahigh Sensitive Piezotronic Strain Sensors Based on a ZnSnO3 Nanowire/Microwire. / Wu, Jyh Ming; Chen, Cheng-Ying; Zhang, Yan et al.
In: ACS Nano, Vol. 6, No. 5, 22.05.2012, p. 4369-4374.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review