Ultrahigh Energy Density of Antiferroelectric PbZrO3-Based Films at Low Electric Field

Dongxu Li; Xiangyu Meng; Enhao Zhou; Xiaoxiao Chen; Zhonghui Shen; Qinghu Guo; Zhonghua Yao; Minghe Cao; Jinsong Wu; Shujun Zhang; Hanxing Liu; Hua Hao

doi:10.1002/adfm.202302995

Ultrahigh Energy Density of Antiferroelectric PbZrO₃-Based Films at Low Electric Field

Dongxu Li
, Xiangyu Meng
, Enhao Zhou
, Xiaoxiao Chen
, Zhonghui Shen
, Qinghu Guo
, Zhonghua Yao
, Minghe Cao
, Jinsong Wu
, Shujun Zhang^*
, Hanxing Liu
, Hua Hao^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

66 Citations (Scopus)

Abstract

Dielectric capacitors play a vital role in advanced electronics and power systems as a medium of energy storage and conversion. Achieving ultrahigh energy density at low electric field/voltage, however, remains a challenge for insulating dielectric materials. Taking advantage of the phase transition in antiferroelectric (AFE) film PbZrO₃ (PZO), a small amount of isovalent (Sr²⁺) / aliovalent (La³⁺) dopants are introduced to form a hierarchical domain structure to increase the polarization and enhance the backward switching field E_A simultaneously, while maintaining a stable forward switching field E_F. An ultrahigh energy density of 50 J cm⁻³ is achieved for the nominal Pb_0.925La_0.05ZrO₃ (PLZ5) films at low electric fields of 1 MV cm⁻¹, exceeding the current dielectric energy storage films at similar electric field. This study opens a new avenue to enhance energy density of AFE materials at low field/voltage based on a gradient-relaxor AFE strategy, which has significant implications for the development of new dielectric materials that can operate at low field/voltage while still delivering high energy density. © 2023 Wiley-VCH GmbH.

Original language	English
Article number	2302995
Number of pages	10
Journal	Advanced Functional Materials
Volume	33
Issue number	44
Online published	2 Jul 2023
DOIs	https://doi.org/10.1002/adfm.202302995
Publication status	Published - 25 Oct 2023
Externally published	Yes

Funding

This work was supported by the Guangdong Basic and Applied Basic Research Foundation (no. 2022B1515120041 and 2022A1515010073), the Major Program of the Natural Science Foundation of China (no. 51790490), the Major Research Plan of the Natural Science Foundation of China (no. 92066103), and the Natural Science Foundation of China (no. 52002300).

Research Keywords

antiferroelectric
energy storage
films
low electric field
PbZrO3

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Cite this

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title = "Ultrahigh Energy Density of Antiferroelectric PbZrO3-Based Films at Low Electric Field",

abstract = "Dielectric capacitors play a vital role in advanced electronics and power systems as a medium of energy storage and conversion. Achieving ultrahigh energy density at low electric field/voltage, however, remains a challenge for insulating dielectric materials. Taking advantage of the phase transition in antiferroelectric (AFE) film PbZrO3 (PZO), a small amount of isovalent (Sr2+) / aliovalent (La3+) dopants are introduced to form a hierarchical domain structure to increase the polarization and enhance the backward switching field EA simultaneously, while maintaining a stable forward switching field EF. An ultrahigh energy density of 50 J cm−3 is achieved for the nominal Pb0.925La0.05ZrO3 (PLZ5) films at low electric fields of 1 MV cm−1, exceeding the current dielectric energy storage films at similar electric field. This study opens a new avenue to enhance energy density of AFE materials at low field/voltage based on a gradient-relaxor AFE strategy, which has significant implications for the development of new dielectric materials that can operate at low field/voltage while still delivering high energy density. {\textcopyright} 2023 Wiley-VCH GmbH.",

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author = "Dongxu Li and Xiangyu Meng and Enhao Zhou and Xiaoxiao Chen and Zhonghui Shen and Qinghu Guo and Zhonghua Yao and Minghe Cao and Jinsong Wu and Shujun Zhang and Hanxing Liu and Hua Hao",

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T1 - Ultrahigh Energy Density of Antiferroelectric PbZrO3-Based Films at Low Electric Field

AU - Li, Dongxu

AU - Meng, Xiangyu

AU - Zhou, Enhao

AU - Chen, Xiaoxiao

AU - Shen, Zhonghui

AU - Guo, Qinghu

AU - Yao, Zhonghua

AU - Cao, Minghe

AU - Wu, Jinsong

AU - Zhang, Shujun

AU - Liu, Hanxing

AU - Hao, Hua

PY - 2023/10/25

Y1 - 2023/10/25

N2 - Dielectric capacitors play a vital role in advanced electronics and power systems as a medium of energy storage and conversion. Achieving ultrahigh energy density at low electric field/voltage, however, remains a challenge for insulating dielectric materials. Taking advantage of the phase transition in antiferroelectric (AFE) film PbZrO3 (PZO), a small amount of isovalent (Sr2+) / aliovalent (La3+) dopants are introduced to form a hierarchical domain structure to increase the polarization and enhance the backward switching field EA simultaneously, while maintaining a stable forward switching field EF. An ultrahigh energy density of 50 J cm−3 is achieved for the nominal Pb0.925La0.05ZrO3 (PLZ5) films at low electric fields of 1 MV cm−1, exceeding the current dielectric energy storage films at similar electric field. This study opens a new avenue to enhance energy density of AFE materials at low field/voltage based on a gradient-relaxor AFE strategy, which has significant implications for the development of new dielectric materials that can operate at low field/voltage while still delivering high energy density. © 2023 Wiley-VCH GmbH.

AB - Dielectric capacitors play a vital role in advanced electronics and power systems as a medium of energy storage and conversion. Achieving ultrahigh energy density at low electric field/voltage, however, remains a challenge for insulating dielectric materials. Taking advantage of the phase transition in antiferroelectric (AFE) film PbZrO3 (PZO), a small amount of isovalent (Sr2+) / aliovalent (La3+) dopants are introduced to form a hierarchical domain structure to increase the polarization and enhance the backward switching field EA simultaneously, while maintaining a stable forward switching field EF. An ultrahigh energy density of 50 J cm−3 is achieved for the nominal Pb0.925La0.05ZrO3 (PLZ5) films at low electric fields of 1 MV cm−1, exceeding the current dielectric energy storage films at similar electric field. This study opens a new avenue to enhance energy density of AFE materials at low field/voltage based on a gradient-relaxor AFE strategy, which has significant implications for the development of new dielectric materials that can operate at low field/voltage while still delivering high energy density. © 2023 Wiley-VCH GmbH.

KW - antiferroelectric

KW - energy storage

KW - films

KW - low electric field

KW - PbZrO3

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DO - 10.1002/adfm.202302995

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