Ultra-flexible, "invisible" thin-film transistors enabled by amorphous metal oxide/polymer channel layer blends

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

117 Scopus Citations
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Author(s)

  • Li Zeng
  • Nanjia Zhou
  • Peijun Guo
  • Fengyuan Shi
  • Donald B. Buchholz
  • Q. Ma
  • Junsheng Yu
  • Vinayak P. Dravid
  • Robert P. H. Chang
  • Michael Bedzyk
  • Tobin J. Marks
  • Antonio Facchetti

Detail(s)

Original languageEnglish
Pages (from-to)2390-2399
Journal / PublicationAdvanced Materials
Volume27
Issue number14
Online published25 Feb 2015
Publication statusPublished - 8 Apr 2015
Externally publishedYes

Abstract

Ultra-flexible and transparent metal oxide transistors are developed by doping In2O3 films with poly(vinylphenole) (PVP). By adjusting the In2O3:PVP weight ratio, crystallization is frustrated, and conducting pathways for efficient charge transport are maintained. In2O3:5%PVP-based transistors exhibit mobilities approaching 11 cm2 V-1 s-1 before, and retain up to ca. 90% performance after 100 bending/relaxing cycles at a radius of 10 mm.

Research Area(s)

  • flexible materials, indium oxide, polymer blends, thin-film transistors, transparent electronics

Citation Format(s)

Ultra-flexible, "invisible" thin-film transistors enabled by amorphous metal oxide/polymer channel layer blends. / Yu, Xinge; Zeng, Li; Zhou, Nanjia et al.
In: Advanced Materials, Vol. 27, No. 14, 08.04.2015, p. 2390-2399.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review