TXRF APPLICATIONS IN THE SEMICONDUCTOR INDUSTRY

R. S. Hockett; Paul K. Chu

TXRF APPLICATIONS IN THE SEMICONDUCTOR INDUSTRY

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

Total reflection X-ray Fluorescence (TXRF) can be used to quantitatively measure heavy metal surface contamination on wafers up to 200mm in diameter, with detection limits in the 10¹⁰ atoms/cm² range. This analytical measurement can then be a tool to identify and eliminate the source of contamination. Defects caused by this kind of contamination can therefore be controlled. Examples are given for silicon processing with emphasis on the new TECHNOS TREX 610 TXRF instrument capability which is used in Japan for defect elimination in commercial 4 Mbit DRAM processes.

Original language	English
Title of host publication	Proceedings of the International Conference
Subtitle of host publication	MATERIALS AND PROCESS CHARACTERIZATION FOR VLSI, 1991 (ICMPC' 91)
Editors	X. F. Zong, Y. Y. Wang, X. Y. Gu
Pages	563-566
Publication status	Published - Oct 1991
Externally published	Yes
Event	International Conference on Materials and Process Characterization for VLSI, 1991 (ICMPC '91) - Shanghai , China Duration: 21 Oct 1991 → 25 Oct 1991

Conference

Conference	International Conference on Materials and Process Characterization for VLSI, 1991 (ICMPC '91)
Country/Territory	China
City	Shanghai
Period	21/10/91 → 25/10/91

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@inproceedings{713f77a8da084c0198f17dc6a39a43da,

title = "TXRF APPLICATIONS IN THE SEMICONDUCTOR INDUSTRY",

abstract = "Total reflection X-ray Fluorescence (TXRF) can be used to quantitatively measure heavy metal surface contamination on wafers up to 200mm in diameter, with detection limits in the 1010 atoms/cm2 range. This analytical measurement can then be a tool to identify and eliminate the source of contamination. Defects caused by this kind of contamination can therefore be controlled. Examples are given for silicon processing with emphasis on the new TECHNOS TREX 610 TXRF instrument capability which is used in Japan for defect elimination in commercial 4 Mbit DRAM processes. ",

author = "Hockett, {R. S.} and Chu, {Paul K.}",

year = "1991",

month = oct,

language = "English",

pages = "563--566",

editor = "Zong, {X. F. } and Wang, {Y. Y.} and Gu, {X. Y. }",

booktitle = "Proceedings of the International Conference",

note = "International Conference on Materials and Process Characterization for VLSI, 1991 (ICMPC '91) ; Conference date: 21-10-1991 Through 25-10-1991",

}

TXRF APPLICATIONS IN THE SEMICONDUCTOR INDUSTRY. / Hockett, R. S.; Chu, Paul K.
Proceedings of the International Conference: MATERIALS AND PROCESS CHARACTERIZATION FOR VLSI, 1991 (ICMPC' 91). ed. / X. F. Zong; Y. Y. Wang; X. Y. Gu. 1991. p. 563-566.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - TXRF APPLICATIONS IN THE SEMICONDUCTOR INDUSTRY

AU - Hockett, R. S.

AU - Chu, Paul K.

PY - 1991/10

Y1 - 1991/10

N2 - Total reflection X-ray Fluorescence (TXRF) can be used to quantitatively measure heavy metal surface contamination on wafers up to 200mm in diameter, with detection limits in the 1010 atoms/cm2 range. This analytical measurement can then be a tool to identify and eliminate the source of contamination. Defects caused by this kind of contamination can therefore be controlled. Examples are given for silicon processing with emphasis on the new TECHNOS TREX 610 TXRF instrument capability which is used in Japan for defect elimination in commercial 4 Mbit DRAM processes.

AB - Total reflection X-ray Fluorescence (TXRF) can be used to quantitatively measure heavy metal surface contamination on wafers up to 200mm in diameter, with detection limits in the 1010 atoms/cm2 range. This analytical measurement can then be a tool to identify and eliminate the source of contamination. Defects caused by this kind of contamination can therefore be controlled. Examples are given for silicon processing with emphasis on the new TECHNOS TREX 610 TXRF instrument capability which is used in Japan for defect elimination in commercial 4 Mbit DRAM processes.

M3 - RGC 32 - Refereed conference paper (with host publication)

SP - 563

EP - 566

BT - Proceedings of the International Conference

A2 - Zong, X. F.

A2 - Wang, Y. Y.

A2 - Gu, X. Y.

T2 - International Conference on Materials and Process Characterization for VLSI, 1991 (ICMPC '91)

Y2 - 21 October 1991 through 25 October 1991

ER -

TXRF APPLICATIONS IN THE SEMICONDUCTOR INDUSTRY

Abstract

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