Two-step Al/Ti metallization to PtSi/Si structures

M. Eizenberg; K. N. Tu; C. J. Palmstrøm; J. W. Mayer

doi:10.1063/1.95409

Two-step Al/Ti metallization to PtSi/Si structures

M. Eizenberg, K. N. Tu, C. J. Palmstrøm, J. W. Mayer

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

6 Citations (Scopus)

Abstract

A two-step Al metallization procedure to prevent Al degradation of PtSi/Si Schottky barrier characteristics has been evaluated using Al₃Ti as the kinetic barrier to the consumption of Ti. In the first step a thin Al layer is deposited on a Ti layer on PtSi/Si and is heated to the standard metallization process temperature of 450-500°C. The Al and Ti thicknesses are chosen so that the Al is consumed to form Al₃Ti with Ti remaining between the aluminide and silicide. In the second step a thick layer of Al, compatible with interconnect requirements, is deposited and annealed at temperatures around 350°C. The formation rate of Al₃Ti at this temperature is sufficiently low that consumption of Ti is minimal and the electrical characteristic of the PtSi/Si contact is preserved.

Original language	English
Pages (from-to)	905-907
Journal	Applied Physics Letters
Volume	45
Issue number	8
DOIs	https://doi.org/10.1063/1.95409
Publication status	Published - 1984
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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title = "Two-step Al/Ti metallization to PtSi/Si structures",

abstract = "A two-step Al metallization procedure to prevent Al degradation of PtSi/Si Schottky barrier characteristics has been evaluated using Al3Ti as the kinetic barrier to the consumption of Ti. In the first step a thin Al layer is deposited on a Ti layer on PtSi/Si and is heated to the standard metallization process temperature of 450-500°C. The Al and Ti thicknesses are chosen so that the Al is consumed to form Al3Ti with Ti remaining between the aluminide and silicide. In the second step a thick layer of Al, compatible with interconnect requirements, is deposited and annealed at temperatures around 350°C. The formation rate of Al3Ti at this temperature is sufficiently low that consumption of Ti is minimal and the electrical characteristic of the PtSi/Si contact is preserved.",

author = "M. Eizenberg and Tu, {K. N.} and Palmstr{\o}m, {C. J.} and Mayer, {J. W.}",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

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doi = "10.1063/1.95409",

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volume = "45",

pages = "905--907",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Two-step Al/Ti metallization to PtSi/Si structures

AU - Eizenberg, M.

AU - Tu, K. N.

AU - Palmstrøm, C. J.

AU - Mayer, J. W.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1984

Y1 - 1984

N2 - A two-step Al metallization procedure to prevent Al degradation of PtSi/Si Schottky barrier characteristics has been evaluated using Al3Ti as the kinetic barrier to the consumption of Ti. In the first step a thin Al layer is deposited on a Ti layer on PtSi/Si and is heated to the standard metallization process temperature of 450-500°C. The Al and Ti thicknesses are chosen so that the Al is consumed to form Al3Ti with Ti remaining between the aluminide and silicide. In the second step a thick layer of Al, compatible with interconnect requirements, is deposited and annealed at temperatures around 350°C. The formation rate of Al3Ti at this temperature is sufficiently low that consumption of Ti is minimal and the electrical characteristic of the PtSi/Si contact is preserved.

AB - A two-step Al metallization procedure to prevent Al degradation of PtSi/Si Schottky barrier characteristics has been evaluated using Al3Ti as the kinetic barrier to the consumption of Ti. In the first step a thin Al layer is deposited on a Ti layer on PtSi/Si and is heated to the standard metallization process temperature of 450-500°C. The Al and Ti thicknesses are chosen so that the Al is consumed to form Al3Ti with Ti remaining between the aluminide and silicide. In the second step a thick layer of Al, compatible with interconnect requirements, is deposited and annealed at temperatures around 350°C. The formation rate of Al3Ti at this temperature is sufficiently low that consumption of Ti is minimal and the electrical characteristic of the PtSi/Si contact is preserved.

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U2 - 10.1063/1.95409

DO - 10.1063/1.95409

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 45

SP - 905

EP - 907

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Two-step Al/Ti metallization to PtSi/Si structures

Abstract

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