Two-photon excitation in an intermediate band solar cell structure

Nazmul Ahsan; Naoya Miyashita; Muhammad Monirul Islam; Kin Man Yu; Wladek Walukiewicz; Yoshitaka Okada

doi:10.1063/1.4709405

Two-photon excitation in an intermediate band solar cell structure

Nazmul Ahsan, Naoya Miyashita, Muhammad Monirul Islam, Kin Man Yu, Wladek Walukiewicz, Yoshitaka Okada

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

119 Citations (Scopus)

Abstract

We present evidence for the production of photocurrent due to two-photon excitation in an intermediate band solar cell structure. The structure consists of an n-GaNAs intermediate band layer sandwiched between a p-AlGaAs emitter and an n-AlGaAs barrier layer with suitable doping level to block electron escaping from the intermediate band to the bottom n-GaAs substrate. Multi-band transitions observed in two-photon excitation experiments are explained using photo-modulated reflectance spectrum, and further support for intermediate band solar cell operation of this structure is given by current-voltage measurements. © 2012 American Institute of Physics.

Original language	English
Article number	172111
Journal	Applied Physics Letters
Volume	100
Issue number	17
DOIs	https://doi.org/10.1063/1.4709405
Publication status	Published - 23 Apr 2012
Externally published	Yes

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title = "Two-photon excitation in an intermediate band solar cell structure",

abstract = "We present evidence for the production of photocurrent due to two-photon excitation in an intermediate band solar cell structure. The structure consists of an n-GaNAs intermediate band layer sandwiched between a p-AlGaAs emitter and an n-AlGaAs barrier layer with suitable doping level to block electron escaping from the intermediate band to the bottom n-GaAs substrate. Multi-band transitions observed in two-photon excitation experiments are explained using photo-modulated reflectance spectrum, and further support for intermediate band solar cell operation of this structure is given by current-voltage measurements. {\textcopyright} 2012 American Institute of Physics.",

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T1 - Two-photon excitation in an intermediate band solar cell structure

AU - Ahsan, Nazmul

AU - Miyashita, Naoya

AU - Monirul Islam, Muhammad

AU - Man Yu, Kin

AU - Walukiewicz, Wladek

AU - Okada, Yoshitaka

PY - 2012/4/23

Y1 - 2012/4/23

N2 - We present evidence for the production of photocurrent due to two-photon excitation in an intermediate band solar cell structure. The structure consists of an n-GaNAs intermediate band layer sandwiched between a p-AlGaAs emitter and an n-AlGaAs barrier layer with suitable doping level to block electron escaping from the intermediate band to the bottom n-GaAs substrate. Multi-band transitions observed in two-photon excitation experiments are explained using photo-modulated reflectance spectrum, and further support for intermediate band solar cell operation of this structure is given by current-voltage measurements. © 2012 American Institute of Physics.

AB - We present evidence for the production of photocurrent due to two-photon excitation in an intermediate band solar cell structure. The structure consists of an n-GaNAs intermediate band layer sandwiched between a p-AlGaAs emitter and an n-AlGaAs barrier layer with suitable doping level to block electron escaping from the intermediate band to the bottom n-GaAs substrate. Multi-band transitions observed in two-photon excitation experiments are explained using photo-modulated reflectance spectrum, and further support for intermediate band solar cell operation of this structure is given by current-voltage measurements. © 2012 American Institute of Physics.

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DO - 10.1063/1.4709405

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 172111

ER -

Two-photon excitation in an intermediate band solar cell structure

Abstract

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