Two-dimensional sample temperature modeling in separation by plasma implantation of oxygen (SPIMOX) process

Plasma immersion ion implantation (PIII) offers high throughput and efficiency in the synthesis of silicon-on-insulator (SOI) materials. In the separation by plasma implantation of oxygen (SPIMOX) process, the spatial and time variation of the sample temperature must be known and well controlled to ensure uniform buried oxide and silicon overlying layer thicknesses over the entire silicon wafer. In this paper, we describe a two-dimensional model and derive the temperature distribution on the silicon wafer with respect to time and other process parameters. Our results show laterally nonuniform heating by the incoming ions and the local temperature is influenced more by the sample voltage and thermal irradiation coefficient of the target than the pulse duration and plasma density. The model provides a simple and quick means to determine whether external heating will be needed to maintain the sample temperature at 600 °C during the SPIMOX process.