Tunneling-based charge percolation transport in a random network of semi-conductive nanoclusters embedded in a dielectric matrix
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
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Detail(s)
Original language | English |
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Pages (from-to) | 84-92 |
Journal / Publication | Thin Solid Films |
Volume | 574 |
Publication status | Published - 1 Jan 2015 |
Link(s)
Abstract
The percolating tunneling transport of electrons in a random network of nanoclusters made of semi-conductive material and embedded in a dielectric matrix is studied in a simple model. Despite some strong assumptions, the model is able to reproduce results already reported in the literature, like the critical behavior of the current density at small volume fractions of nanoclusters. Due to its simplicity (e.g. contribution to the local conduction only fromnearest neighbors), themodel predicts a near-critical variation of the conductancewhich is rather close to the universal power-law behavior of a direct-contact composite material. In addition, the method can also compute total average numbers of electrons and their spatial distribution established in the sample operated in stationary regimes. Using such features of the model, optimal device con fi gurations can be designed for optoelectronic applications.
Research Area(s)
- Composite materials, Embedded nanoclusters, Tunneling percolation
Citation Format(s)
Tunneling-based charge percolation transport in a random network of semi-conductive nanoclusters embedded in a dielectric matrix. / Filip, Valeriu; Bercu, Mircea; Wong, Hei.
In: Thin Solid Films, Vol. 574, 01.01.2015, p. 84-92.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review