Tuning the photoluminescence, conduction mechanism and scattering mechanism of ZnSnN2

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

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Author(s)

  • Xing-Min Cai
  • Bo Wang
  • Fan Ye
  • Jun-Jie Zeng
  • Dong-Ping Zhang
  • Ping Fan

Detail(s)

Original languageEnglish
Pages (from-to)237-243
Journal / PublicationJournal of Alloys and Compounds
Volume779
Early online date20 Nov 2018
StateE-pub ahead of print - 20 Nov 2018

Abstract

The high electron concentration and low mobility of ZnSnN2 hinder its potential applications in photocatalytic and optoelectronic devices. To reveal the mechanism, herein, ZnSnN2 thin films were prepared under different sputtering pressure. The results show that impurity band conduction, an electron density of above 1020cm−3 and a mobility of 2 cm2 V−1 s−1 dominated by variable-range hopping are observed in samples prepared at lower sputtering pressure, due to the unintentional incorporation of substitutional oxygen which is from residual vapour and which substitutes nitrogen, while conduction band conduction, an electron density of 1019 cm−3, a mobility of 24 cm2 V−1 s−1 limited by ionized impurity scattering and self-compensation ratio as well as an interband direct recombination emission are found in samples prepared at higher sputtering pressure, due to the decrease in substitutional oxygen doping.

Research Area(s)

  • Conduction band conduction, Impurity band conduction, Ionized impurity scattering, Photoluminescence, ZnSnN2

Citation Format(s)

Tuning the photoluminescence, conduction mechanism and scattering mechanism of ZnSnN2. / Cai, Xing-Min; Wang, Bo; Ye, Fan; Vaithinathan, Karthikeyan; Zeng, Jun-Jie; Zhang, Dong-Ping; Fan, Ping; Roy, V. A.L.

In: Journal of Alloys and Compounds, Vol. 779, 30.03.2019, p. 237-243.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review