Tuning structural, electrical, and optical properties of oxide alloys : ZnO 1-xSe x

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Author(s)

  • Marie A. Mayer
  • Kin Man Yu
  • Eugene E. Haller
  • Wladek Walukiewicz

Detail(s)

Original languageEnglish
Article number113505
Journal / PublicationJournal of Applied Physics
Volume111
Issue number11
Publication statusPublished - 1 Jun 2012
Externally publishedYes

Abstract

Previously we showed that it is possible to narrow the band gap of zinc oxide from 3.3 to ∼2 eV through the addition of Se. Here, we use thin film samples of ZnO 1-xSe x grown by pulsed laser deposition to describe in detail the effect of growth parameters (temperature, pressure, and fluence) on the chemistry, structure, and optoelectronic properties of oxide alloys. We analyze the influences of temperature, laser fluence, and pressure during growth on the structure and composition of the films and define the parameter space in which homogeneous ZnO 1-xSe x alloy films can in fact be synthesized. Electronic transport in films grown under different conditions was characterized by resistivity, thermopower, and Hall effect measurements. We discuss how the electron affinity and native defects in polycrystalline oxide alloys enable reasonable mobilities (∼15 cm 2/Vs) relative to their single crystalline counterparts. Finally, we elaborate on the model of optical structure in ZnO 1-xSe x and discuss the dependence of optical properties on growth temperature and fluence. © 2012 American Institute of Physics.

Citation Format(s)

Tuning structural, electrical, and optical properties of oxide alloys : ZnO 1-xSe x. / Mayer, Marie A.; Yu, Kin Man; Haller, Eugene E.; Walukiewicz, Wladek.

In: Journal of Applied Physics, Vol. 111, No. 11, 113505, 01.06.2012.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal