Tuning Stress in Cu Thin Films by Developing Highly (111)-Oriented Nanotwinned Structure

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • I-Ju Wang
  • Ching-Shun Ku
  • Tu-Ngoc Lam
  • E-Wen Huang
  • Chih Chen

Detail(s)

Original languageEnglish
Pages (from-to)109-115
Journal / PublicationJournal of Electronic Materials
Volume49
Issue number1
Online published12 Nov 2019
Publication statusPublished - Jan 2020
Externally publishedYes

Abstract

We have examined the effect of different bath temperatures on residual stress of both the random-oriented Cu films and the highly (111)-oriented nanotwinned Cu films by synchrotron radiation x-ray measurements. The bath temperature varied from 15°C to 40°C. The results indicate that the average residual stress in the highly (111)-oriented nanotwinned films is higher than that in the randomly oriented Cu films. However, the stress in the highly (111)-oriented Cu decreases with increasing bath temperature. The average residual stress can be reduced from 253 MPa electroplated at 15°C to 95 MPa under a bath temperature of 35°C. We could successfully tune and measure residual stress of the Cu thin films. The films with low residual stress prevent warpage from occurring on the substrate and lower the processing failure in copper direct bonding and other processes that need alignment.

Research Area(s)

  • electroplating, nanotwinned Cu, Residual stress, synchrotron x-ray diffraction

Citation Format(s)

Tuning Stress in Cu Thin Films by Developing Highly (111)-Oriented Nanotwinned Structure. / Wang, I-Ju; Ku, Ching-Shun; Lam, Tu-Ngoc et al.
In: Journal of Electronic Materials, Vol. 49, No. 1, 01.2020, p. 109-115.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review