Tuning of ferromagnetism through anion substitution in Ga-Mn-pnictide ferromagnetic semiconductors

Peter R. Stone; Jeffrey W. Beeman; Kin M. Yu; Oscar D. Dubon

doi:10.1016/j.physb.2007.08.210

Tuning of ferromagnetism through anion substitution in Ga-Mn-pnictide ferromagnetic semiconductors

Peter R. Stone
, Jeffrey W. Beeman
, Kin M. Yu
, Oscar D. Dubon^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

14 Citations (Scopus)

Abstract

We have synthesized Ga_1-xMn_xAs_1-yP_y and Ga_1-xMn_xP_1-yN_y by the combination of ion implantation and pulsed-laser melting. We find that the incorporation of isovalent impurities with smaller atomic radii leads to a realignment of the magnetic easy axis in Ga_1-xMn_xP_1-yN_y/GaP and Ga_1-xMn_xAs_1-yP_y/GaAs thin films from in-plane to out-of-plane. This tensile-strain-induced magnetic anisotropy is reminiscent of that observed in Ga_1-xMn_xAs grown on larger lattice constant (In, Ga)As buffer layers indicating that the role of strain in determining magnetic anisotropy is fundamental to III-Mn-V materials. In addition, we observe a decrease in the ferromagnetic Curie temperature in Ga_1-xMn_xAs_1-yP_y with increasing y from 0 to 0.028. Such a decrease may result from localization of holes as the P/As ratio on the Group V sublattice increases. © 2007 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	454-457
Journal	Physica B: Condensed Matter
Volume	401-402
DOIs	https://doi.org/10.1016/j.physb.2007.08.210
Publication status	Published - 15 Dec 2007
Externally published	Yes

Research Keywords

Ferromagnetic semiconductors
Gallium manganese arsenide
Gallium manganese phosphide
Magnetic anisotropy
Metal-insulator transition

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@article{34194ebb521d4f9c8b9f7b88171d18a9,

title = "Tuning of ferromagnetism through anion substitution in Ga-Mn-pnictide ferromagnetic semiconductors",

abstract = "We have synthesized Ga1-xMnxAs1-yPy and Ga1-xMnxP1-yNy by the combination of ion implantation and pulsed-laser melting. We find that the incorporation of isovalent impurities with smaller atomic radii leads to a realignment of the magnetic easy axis in Ga1-xMnxP1-yNy/GaP and Ga1-xMnxAs1-yPy/GaAs thin films from in-plane to out-of-plane. This tensile-strain-induced magnetic anisotropy is reminiscent of that observed in Ga1-xMnxAs grown on larger lattice constant (In, Ga)As buffer layers indicating that the role of strain in determining magnetic anisotropy is fundamental to III-Mn-V materials. In addition, we observe a decrease in the ferromagnetic Curie temperature in Ga1-xMnxAs1-yPy with increasing y from 0 to 0.028. Such a decrease may result from localization of holes as the P/As ratio on the Group V sublattice increases. {\textcopyright} 2007 Elsevier B.V. All rights reserved.",

keywords = "Ferromagnetic semiconductors, Gallium manganese arsenide, Gallium manganese phosphide, Magnetic anisotropy, Metal-insulator transition",

author = "Stone, \{Peter R.\} and Beeman, \{Jeffrey W.\} and Yu, \{Kin M.\} and Dubon, \{Oscar D.\}",

year = "2007",

month = dec,

day = "15",

doi = "10.1016/j.physb.2007.08.210",

language = "English",

volume = "401-402",

pages = "454--457",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Tuning of ferromagnetism through anion substitution in Ga-Mn-pnictide ferromagnetic semiconductors

AU - Stone, Peter R.

AU - Beeman, Jeffrey W.

AU - Yu, Kin M.

AU - Dubon, Oscar D.

PY - 2007/12/15

Y1 - 2007/12/15

N2 - We have synthesized Ga1-xMnxAs1-yPy and Ga1-xMnxP1-yNy by the combination of ion implantation and pulsed-laser melting. We find that the incorporation of isovalent impurities with smaller atomic radii leads to a realignment of the magnetic easy axis in Ga1-xMnxP1-yNy/GaP and Ga1-xMnxAs1-yPy/GaAs thin films from in-plane to out-of-plane. This tensile-strain-induced magnetic anisotropy is reminiscent of that observed in Ga1-xMnxAs grown on larger lattice constant (In, Ga)As buffer layers indicating that the role of strain in determining magnetic anisotropy is fundamental to III-Mn-V materials. In addition, we observe a decrease in the ferromagnetic Curie temperature in Ga1-xMnxAs1-yPy with increasing y from 0 to 0.028. Such a decrease may result from localization of holes as the P/As ratio on the Group V sublattice increases. © 2007 Elsevier B.V. All rights reserved.

AB - We have synthesized Ga1-xMnxAs1-yPy and Ga1-xMnxP1-yNy by the combination of ion implantation and pulsed-laser melting. We find that the incorporation of isovalent impurities with smaller atomic radii leads to a realignment of the magnetic easy axis in Ga1-xMnxP1-yNy/GaP and Ga1-xMnxAs1-yPy/GaAs thin films from in-plane to out-of-plane. This tensile-strain-induced magnetic anisotropy is reminiscent of that observed in Ga1-xMnxAs grown on larger lattice constant (In, Ga)As buffer layers indicating that the role of strain in determining magnetic anisotropy is fundamental to III-Mn-V materials. In addition, we observe a decrease in the ferromagnetic Curie temperature in Ga1-xMnxAs1-yPy with increasing y from 0 to 0.028. Such a decrease may result from localization of holes as the P/As ratio on the Group V sublattice increases. © 2007 Elsevier B.V. All rights reserved.

KW - Ferromagnetic semiconductors

KW - Gallium manganese arsenide

KW - Gallium manganese phosphide

KW - Magnetic anisotropy

KW - Metal-insulator transition

UR - https://www.scopus.com/pages/publications/36048943632

UR - https://www.scopus.com/pages/publications/36048943632#tab=impact

U2 - 10.1016/j.physb.2007.08.210

DO - 10.1016/j.physb.2007.08.210

M3 - RGC 21 - Publication in refereed journal

SN - 0921-4526

VL - 401-402

SP - 454

EP - 457

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

ER -

Tuning of ferromagnetism through anion substitution in Ga-Mn-pnictide ferromagnetic semiconductors

Abstract

Research Keywords

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