Tuning graphene/silicon Schottky barrier height by chemical doping
Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Title of host publication | IEEE-NANO 2015 - 15th International Conference on Nanotechnology |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. |
| Pages | 1250-1253 |
| ISBN (electronic) | 978-1-4673-8156-7 |
| ISBN (print) | 978-1-4673-8155-0 |
| Publication status | Published - Jul 2015 |
Conference
| Title | 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 |
|---|---|
| Location | Angelicum Congress Centre |
| Place | Italy |
| City | Rome |
| Period | 27 - 30 July 2015 |
Link(s)
Abstract
We demonstrate that the Schottky barrier height of graphene/silicon heterojunction can be efficiently tuned by chemical methods. The accurate value of Schottky barrier height can be extracted by measuring the temperature-dependent IV curve of graphene/silicon heterojunction. The height value is calculated from the slope of Richardson plot (logI/T2 vs. 1/T) of the reverse current region dominated by thermionic emission. Chemical dopants like AuCl3 and NH4F are employed to tune the Fermi level of graphene, and the doping effect is verified by gate-dependent transfer characteristics. Further experiments investigate the influence of doping time and dopant concentration on graphene's doping level. The results show that the doping level gradually increases as the doping time or concentration increase, indicating the possibility to precisely control doping level. In our experiments, the Schottky barrier height of graphene/silicon junction can be tuned between 0.38 to 0.6 eV after doping treatment.
Research Area(s)
- chemical doping, Fermi level, graphene/Si Schottky barrier
Citation Format(s)
Tuning graphene/silicon Schottky barrier height by chemical doping. / Tang, Xin; Wu, Guangfu; Zhang, Hengkai et al.
IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers, Inc., 2015. p. 1250-1253 7388857.
IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers, Inc., 2015. p. 1250-1253 7388857.
Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review
